STD4NS25T4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STD4NS25T4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 64 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: DPAK

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STD4NS25T4 Datasheet (PDF)

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std4ns25t4.pdf pdf_icon

STD4NS25N-CHANNEL 250V - 0.9 - 4A DPAK/IPAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTD4NS25 250 V

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std4ns25.pdf pdf_icon

STD4NS25N-CHANNEL 250V - 0.9 - 4A DPAK/IPAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTD4NS25 250 V

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STD4NA40N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD4NA40 400 V

9.2. Size:142K 1
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STD4N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DSTD4N25 250 V

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std4nk100z.pdf pdf_icon

STD4NK100ZN-channel 1000 V, 5.6 , 2.2 A SuperMESH Power MOSFET Zener-protected in DPAK packageDatasheet preliminary dataFeaturesOrder code VDSS RDS(on)max IDSTD4NK100Z 1000 V

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stb4nk60z-1 stb4nk60zt4 std4nk60z-1 std4nk60zt4.pdf pdf_icon

STB4NK60Z-1, STB4NK60ZT4 STD4NK60Z-1, STD4NK60ZT4DatasheetN-channel 600 V, 1.7 typ., 4 A SuperMESH Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packagesFeaturesTABTABOrder codes VDS RDS(on) max. PTOT ID31322 STB4NK60Z-12 1D PAKI PAKSTB4NK60ZT4600 V 2 70 W 4 ATABTABSTD4NK60Z-132312STD4NK60ZT41DPAKIPAK Extremely high dv/dt

9.5. Size:577K st
stb4nk60zx std4nk60zx stp4nk60z stp4nk60zfp.pdf pdf_icon

STB4NK60Z, STB4NK60Z-1, STD4NK60ZSTD4NK60Z-1, STP4NK60Z,STP4NK60ZFPN-channel 600 V - 1.76 - 4 A SuperMESH Power MOSFETDPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FPFeaturesRDS(on) Type VDSS PW ID 332max3 1121STB4NK60Z 600 V

9.6. Size:90K st
std4nb25.pdf pdf_icon

STD4NB25 N - CHANNEL 250V - 0.95 - 4A - DPAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTD4NB25 250 V

9.7. Size:585K st
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STD4N52K3, STP4N52K3, STU4N52K3DatasheetN-channel 525 V, 2.1 typ., 2.5 A MDmesh K3 Power MOSFETs in DPAK, TO-220 and IPAK packagesFeaturesTAB TAB3VDS RDS(on)max. IDOrder code Package1DPAKSTD4N52K3 2.5 A DPAK32TO-220TAB 1STP4N52K3 525 V 2.6 2.5 A TO-220STU4N52K3 2.5 A IPAK32IPAK 1 100% avalanche tested Extremely high dv/dt capabilityD(

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STD4N52K3, STF4N52K3STP4N52K3, STU4N52K3N-channel 525 V, 2.5 A, 2.1 , IPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Order codes VDSS ID Pwmax 33211STD4N52K3 2.5 A 45 WDPAKIPAKSTF4N52K3 2.5 A 20 W525 V

9.9. Size:271K st
std4n20.pdf pdf_icon

STD4N20N-CHANNEL 200V - 1.2 - 4A DPAK/IPAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTD4N20 200 V

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std4nk50zt4.pdf pdf_icon

STP4NK50Z - STP4NK50ZFPSTD4NK50Z - STD4NK50Z-1N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NK50Z 500 V

9.11. Size:666K st
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STP4NK50Z - STP4NK50ZFPSTD4NK50Z - STD4NK50Z-1N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NK50Z 500 V

9.12. Size:543K st
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STP4NK80Z - STP4NK80ZFPSTD4NK80Z - STD4NK80Z-1N-channel 800V - 3 - 3A - TO-220/TO-220FP/DPAK/IPAKZener - Protected SuperMESH MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)32STP4NK80Z 800 V

9.13. Size:62K st
std4nb40.pdf pdf_icon

STD4NB40N - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTD4NB40 400 V

9.14. Size:550K st
stp4nk80z stp4nk80zfp std4nk80z std4nk80z-1.pdf pdf_icon

STP4NK80Z - STP4NK80ZFPSTD4NK80Z - STD4NK80Z-1N-channel 800V - 3 - 3A - TO-220/TO-220FP/DPAK/IPAKZener - Protected SuperMESH MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)32STP4NK80Z 800 V

9.15. Size:1294K st
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STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5N-channel 800 V, 2.1 typ., 3 A MDmesh K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeatures TABOrder code VDS RDS(on) max. ID PTOT31STD4N80K5 60 W3DPAK2STF4N80K5 20 W1800 V 2.5 3 ATO-220FPTAB STP4N80K560 WTAB STU4N80K5 Industrys lowest RDS(on) x area3

9.16. Size:807K st
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STD4N90K5 N-channel 900 V, 1.90 typ.,3 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD4N90K5 900 V 2.10 3 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Figure 1: Internal schematic

9.17. Size:965K st
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STB4NK60Z, STB4NK60Z-1, STD4NK60ZSTD4NK60Z-1, STP4NK60Z,STP4NK60ZFPN-channel 600 V, 1.76 , 4 A SuperMESH Power MOSFETin DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FPFeaturesRDS(on) Type VDSS PW ID 332max3 1121STB4NK60Z 600 V

9.18. Size:903K st
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9.19. Size:1006K st
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