STD5406N Todos los transistores

 

STD5406N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STD5406N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 57 nS
   Cossⓘ - Capacitancia de salida: 370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: DPAK
 

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STD5406N Datasheet (PDF)

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 std5406n.pdf pdf_icon

STD5406N

NTD5406N, STD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate ChargeID MAX STD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) TYP (Note 1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable* 40 V 8.7 m @ 10 V 70 A These Devices a

 0.1. Size:136K  onsemi
 ntd5406ng std5406nt4g.pdf pdf_icon

STD5406N

NTD5406N, STD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5406NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 8.7 m @ 10 V 70 AApplications Electronic Brake Systems Electronic Power SteeringN-

 8.1. Size:135K  onsemi
 ntd5407ng std5407nt4g.pdf pdf_icon

STD5406N

NTD5407N, STD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5407NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 21 mW @ 10 V 38 AApplications Electronic Brake Systems Electronic Power SteeringN-Ch

 8.2. Size:96K  onsemi
 std5407n.pdf pdf_icon

STD5406N

NTD5407N, STD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate ChargeID MAX STD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) TYP (Note 1)Unique Site and Control Change Requirements; AEC-Q10140 V 21 mW @ 10 V 38 AQualified and PPAP Capable* These Devices ar

MOSTRAR MÁS

Otros transistores... STD4NK100Z , STD4NK50ZT4 , STD4NK60ZT4 , STD4NK80ZT4 , STD4NS25T4 , STD50NH02L-1 , STD50NH02LT4 , STD52P3LLH6 , AON7408 , STD5406NT4G , STD5407N , STD5407NT4G , STD55NH2LLT4 , STD5N20LT4 , STD5N60M2 , STD5N95K5 , STD5NK40Z-1 .

 

 
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