All MOSFET. STD5406N Datasheet

 

STD5406N Datasheet and Replacement


   Type Designator: STD5406N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DPAK
 

 STD5406N substitution

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STD5406N Datasheet (PDF)

 ..1. Size:97K  onsemi
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STD5406N

NTD5406N, STD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate ChargeID MAX STD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) TYP (Note 1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable* 40 V 8.7 m @ 10 V 70 A These Devices a

 0.1. Size:136K  onsemi
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STD5406N

NTD5406N, STD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5406NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 8.7 m @ 10 V 70 AApplications Electronic Brake Systems Electronic Power SteeringN-

 8.1. Size:135K  onsemi
ntd5407ng std5407nt4g.pdf pdf_icon

STD5406N

NTD5407N, STD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5407NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 21 mW @ 10 V 38 AApplications Electronic Brake Systems Electronic Power SteeringN-Ch

 8.2. Size:96K  onsemi
std5407n.pdf pdf_icon

STD5406N

NTD5407N, STD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate ChargeID MAX STD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) TYP (Note 1)Unique Site and Control Change Requirements; AEC-Q10140 V 21 mW @ 10 V 38 AQualified and PPAP Capable* These Devices ar

Datasheet: STD4NK100Z , STD4NK50ZT4 , STD4NK60ZT4 , STD4NK80ZT4 , STD4NS25T4 , STD50NH02L-1 , STD50NH02LT4 , STD52P3LLH6 , AON7408 , STD5406NT4G , STD5407N , STD5407NT4G , STD55NH2LLT4 , STD5N20LT4 , STD5N60M2 , STD5N95K5 , STD5NK40Z-1 .

History: HMS4294 | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | SM4311PSKP | AP60SL650AFI

Keywords - STD5406N MOSFET datasheet

 STD5406N cross reference
 STD5406N equivalent finder
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