STD5406NT4G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD5406NT4G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 57 nS

Cossⓘ - Capacitancia de salida: 370 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: DPAK

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STD5406NT4G datasheet

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 ntd5406ng std5406nt4g.pdf pdf_icon

STD5406NT4G

NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge AEC Q101 Qualified - STD5406N ID MAX V(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant 40 V 8.7 m @ 10 V 70 A Applications Electronic Brake Systems Electronic Power Steering N-

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STD5406NT4G

NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge ID MAX STD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) TYP (Note 1) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* 40 V 8.7 m @ 10 V 70 A These Devices a

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STD5406NT4G

NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge AEC Q101 Qualified - STD5407N ID MAX V(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant 40 V 21 mW @ 10 V 38 A Applications Electronic Brake Systems Electronic Power Steering N-Ch

 8.2. Size:96K  onsemi
 std5407n.pdf pdf_icon

STD5406NT4G

NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge ID MAX STD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) TYP (Note 1) Unique Site and Control Change Requirements; AEC-Q101 40 V 21 mW @ 10 V 38 A Qualified and PPAP Capable* These Devices ar

MOSTRAR MÁS

Otros transistores... STD4NK50ZT4, STD4NK60ZT4, STD4NK80ZT4, STD4NS25T4, STD50NH02L-1, STD50NH02LT4, STD52P3LLH6, STD5406N, IRF630, STD5407N, STD5407NT4G, STD55NH2LLT4, STD5N20LT4, STD5N60M2, STD5N95K5, STD5NK40Z-1, STD5NK40ZT4