STD6NF10T4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD6NF10T4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 10 nS
Cossⓘ - Capacitancia de salida: 45 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de STD6NF10T4 MOSFET
- Selecciónⓘ de transistores por parámetros
STD6NF10T4 datasheet
..1. Size:325K st
std6nf10t4.pdf 
STD6NF10 STU6NF10 N-channel 100 V, 0.22 , 6 A, DPAK, IPAK low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) max ID STD6NF10 100 V
6.1. Size:327K st
std6nf10 stu6nf10.pdf
STD6NF10 STU6NF10 N-channel 100 V, 0.22 , 6 A, DPAK, IPAK low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) max ID STD6NF10 100 V
6.2. Size:266K st
std6nf10.pdf
STD6NF10 N-CHANNEL 100V - 0.22 - 6A IPAK/DPAK LOW GATE CHARGE STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD6NF10 100 V
9.2. Size:500K st
std6n95k5 stp6n95k5 stu6n95k5 stw6n95k5.pdf
STD6N95K5, STP6N95K5 STU6N95K5, STW6N95K5 Datasheet N-channel 950 V, 1 typ., 9 A MDmesh K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packages Features TAB TAB Order codes VDS RDS(on) max. ID PTOT 3 1 DPAK STD6N95K5 3 TO-220 STP6N95K5 2 1 950 V 1.25 9 A 90 W TAB STU6N95K5 STW6N95K5 DPAK 950 V worldwide best RDS(on) 3 2 IPAK 1 3 Worldwide best FOM
9.4. Size:881K st
stb6n65m2 std6n65m2.pdf
STB6N65M2, STD6N65M2 N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in D2PAK and DPAK packages Datasheet - preliminary data Features Order codes VDS RDS(on) max ID STB6N65M2 650 V 1.35 4 A TAB TAB STD6N65M2 3 1 3 Extremely low gate charge 1 DPAK 2 D PAK Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected App
9.5. Size:399K st
std6nk50zt4 stf6nk50z.pdf
STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93 - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z 500 V
9.6. Size:1156K st
stb6n60m2 std6n60m2.pdf
STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packages Datasheet - production data Features VDS @ RDS(on) Order codes ID TJmax max TAB TAB STB6N60M2 650 V 1.2 4.5 A 3 STD6N60M2 1 3 1 DPAK 2 Extremely low gate charge D PAK Lower RDS(on) x area vs previous generation Low gate input resistanc
9.7. Size:344K st
std6n10.pdf
STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD6N10 100 V
9.8. Size:427K st
std6n62k3 stf6n62k3 stp6n62k3 stu6n62k3.pdf
STD6N62K3 - STF6N62K3 STP6N62K3 - STU6N62K3 N-channel 620 V, 1.1 , 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3 Power MOSFET Features 3 RDS(on) 3 Type VDSS ID Pw 2 1 max 1 DPAK STD6N62K3 620 V
9.9. Size:1258K st
std6n95k5 stp6n95k5 stw6n95k5 stu6n95k5.pdf
STD6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 N-channel 950 V, 1 typ., 9 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220, TO-247 and IPAK packages Datasheet - production data Features TAB TAB 3 Order codes VDS RDS(on) max. ID PTOT 1 3 DPAK STD6N95K5 2 1 STP6N95K5 TO-220 950 V 1.25 9 A 90 W STW6N95K5 TAB STU6N95K5 3 DPAK 950 V worldwide best RDS(on)
9.10. Size:685K st
stb6nm60n std6nm60n stf6nm60n stp6nm60n.pdf
STx6NM60N N-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V
9.11. Size:1146K st
sti6n62k3 stp6n62k3 stu6n62k3 stf6n62k3 std6n62k3.pdf
STD6N62K3, STF6N62K3 STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 , 5.5 A SuperMESH3 Power MOSFET in IPAK, DPAK, TO-220,TO-220FP, I PAK Features RDS(on) 3 Order codes VDSS ID Pw 2 max. 1 3 2 1 IPAK STD6N62K3 90 W I PAK STF6N62K3 30 W 3 STI6N62K3 620 V
9.12. Size:272K st
std6nc40.pdf
STD6NC40 N-CHANNEL 400V - 0.75 - 5A - DPAK / IPAK PowerMesh II MOSFET TYPE VDSS RDS(on) ID STD6NC40 400V
9.13. Size:1153K st
stb6n52k3 std6n52k3 stf6n52k3 stp6n52k3.pdf
STB6N52K3, STD6N52K3 STF6N52K3, STP6N52K3 N-channel 525 V, 1 , 5 A, D PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) 3 Order codes VDSS ID Pw max 1 3 2 STB6N52K3 5 A 70 W DPAK 1 STD6N52K3 5 A(1) 25 W TO-220FP 525 V
9.14. Size:399K st
stp6nk50z stf6nk50z std6nk50z.pdf
STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93 - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z 500 V
9.15. Size:1285K st
stb6n80k5 std6n80k5 sti6n80k5 stp6n80k5.pdf
STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5 Power MOSFETs in D PAK, DPAK, I PAK and TO-220 packages Datasheet - production data Features TAB TAB Order codes VDS RDS(on)max ID PTOT 3 1 3 1 STB6N80K5 DPAK D2PAK STD6N80K5 TAB TAB 800 V 1.6 4.5 A 85 W STI6N80K5 STP6N80K5 3 2 3 2 1 1 Industry s lowest RDS(on) TO-
9.16. Size:420K st
std6n62k3.pdf
STD6N62K3 Datasheet N-channel 620 V, 0.95 typ., 5.5 A MDmesh K3 Power MOSFET in DPAK package Features Order codes VDS RDS(on) max. ID PTOT TAB STD6N62K3 620 V 1.2 5.5 A 90 W 100% avalanche tested 3 2 Extremely high dv/dt capability 1 Very low intrinsic capacitance Improved diode reverse recovery characteristics DPAK Zener-protected D(2, TAB) Appli
9.17. Size:262K inchange semiconductor
std6n95k5.pdf
Isc N-Channel MOSFET Transistor STD6N95K5 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
Otros transistores... STD60NF06T4, STD60NF3LLT4, STD60NF55LT4, STD60NH03L-1, STD60NH03LT4, STD6N60M2, STD6N65M2, STD6N80K5, CS150N03A8, STD6NK50ZT4, STD6NM60N, STD6NM60N-1, STD70N02L, STD70N02L-1, STD70N03L, STD70N03L-1, STD70NH02LT4
