STD70NH02LT4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STD70NH02LT4
   Código: D70NH02L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.8 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 200 nS
   Cossⓘ - Capacitancia de salida: 545 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET STD70NH02LT4

STD70NH02LT4 Datasheet (PDF)

..1. Size:504K st
std70nh02lt4.pdf

STD70NH02LSTD70NH02L-1N-channel 24V - 0.0062 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD70NH02L-1 24V

4.1. Size:505K st
std70nh02l std70nh02l-1.pdf

STD70NH02LSTD70NH02L-1N-channel 24V - 0.0062 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD70NH02L-1 24V

8.1. Size:378K st
std70n02l-1 std70n02l.pdf

STD70N02LSTD70N02L-1N-channel 25V - 0.0068 - 60A - DPAK - IPAKSTripFET III Power MOSFETFeaturesType VDSS RDS(on) IDSTD70N02L 25V

8.2. Size:971K st
stb70n10f4 std70n10f4 stp70n10f4 stw70n10f4.pdf

STB70N10F4, STD70N10F4STP70N10F4, STW70N10F4N-channel 100 V, 0.015 , 60 A, STripFET DeepGATEPower MOSFET in TO-220, DPAK, TO-247, D2PAKFeaturesType VDSS RDS(on) max IDSTB70N10F4 100 V

8.3. Size:351K st
std70n03l-1 std70n03l-1 std70n03l.pdf

STD70N03LSTD70N03L-1N-channel 30V - 0.0059 - 70A - DPAK / IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD70N03L 30V

8.4. Size:742K st
std70ns04zl.pdf

STD70NS04ZLN-channel clamped 9.5 m, 70 A DPAKfully protected SAFeFET Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTD70NS04ZL Clamped

8.5. Size:623K st
std70n6f3.pdf

STD70N6F3N-channel 60 V, 8.0 m, 70 A DPAKSTripFET III Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) ID PwSTD70N6F3 60 V

8.6. Size:374K st
std70n02l std70n02l-1.pdf

STD70N02LSTD70N02L-1N-channel 25V - 0.0068 - 60A - DPAK - IPAKSTripFET III Power MOSFETFeaturesType VDSS RDS(on) IDSTD70N02L 25V

8.7. Size:230K st
std70n2lh5 stu70n2lh5.pdf

STD70N2LH5STU70N2LH5N-channel 25 V, 0.006 , 48 A - DPAK - IPAKSTripFET V Power MOSFETPreliminary DataFeaturesType VDSS RDS(on) max IDSTD70N2LH5 25 V 0.0071 48 A STU70N2LH5 25 V 0.0075 48 A332 RDS(on) * Qg industry benchmark11 Extremely low on-resistance RDS(on)DPAKIPAK Very low switching gate charge High avalanche ruggedness L

8.8. Size:884K cn vbsemi
std70n6f3.pdf

STD70N6F3www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

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