STD7N80K5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STD7N80K5, STP7N80K5, STU7N80K5N-channel 800 V, 0.95 typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on)max ID PTOT2 31STD7N80K5DPAKSTP7N80K5 800 V 1.2 6 A 110 WTABSTU7N80K5TAB Worldwide best FOM (figure of merit)3 Ultra low gate charge2312

isc N-Channel MOSFET Transistor STD7N80K5FEATURESStatic drain-source on-resistance:RDS(on)1.2100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV Gate-Source Voltage 30 V

STD7N65M2N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesRDS(on) Order code VDS max IDTABSTD7N65M2 650 V 1.15 5 A3 Extremely low gate charge1 Excellent output capacitance (Coss) profile 100% avalanche testedDPAK Zener-protectedApplications Switching applicationsFigure 1. Inte

STD7NM60N, STF7NM60N, STU7NM60NDatasheetN-channel 600 V, 0.8 typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages FeaturesVDS RDS(on) max. IDOrder code PackageSTD7NM60N DPAKSTF7NM60N 600 V 0.9 5 A TO-220FPSTU7NM60N IPAKD(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceG(1)Applications

STD7N52DK3STF7N52DK3, STP7N52DK3N-channel 525 V, 0.95 , 6 A, DPAK, TO-220FP, TO-220SuperFREDmesh3 Power MOSFETFeaturesRDS(on) Order codes VDSS max. ID Pw31STD7N52DK3 6 A 90 WDPAKSTF7N52DK3 525 V

STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.84 , 6.2 A, D2PAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax 3311STB7N52K3 525 V

STD7NM64NN-channel 640 V, 5 A, 0.88 typ., MDmesh II Power MOSFET in a DPAK packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDSTD7NM64N 640 V 1.05 5 A TAB 100% avalanche tested3 Low input capacitance and gate charge1 Low gate input resistanceDPAKApplications Switching applicationsDescriptionFigure 1. Internal schematic

STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.72 , 6 A, DPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Order codes VDSS ID Pwmax. 3311STB7N52K3 90 WDPAKDPAKSTD7N52K3 90 W525 V

STD7NM60N, STF7NM60NSTP7NM60N, STU7NM60NN-channel 600 V, 5 A, 0.76 , DPAK, TO-220FP, TO-220, IPAKsecond generation MDmesh Power MOSFETFeaturesVDSS @ RDS(on) Order codes ID3TJmax max.2 3211STD7NM60NTO-220IPAKSTF7NM60N650 V

STP7NK40Z - STP7NK40ZFPSTD7NK40Z - STD7NK40Z-1N-CHANNEL 400V-0.85-5.4A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP7NK40Z 400 V

STD7NS20STD7NS20-1N-CHANNEL 200V - 0.35 - 7A DPAK / IPAKMESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD7NS20 200 V

STD7NK30Z, STF7NK30ZSTP7NK30ZN-channel, 300 V, 0.80 , 5 A TO-220, TO-220FP, DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF7NK30Z 300 V

STD7NK30Z, STF7NK30ZSTP7NK30ZN-channel, 300 V, 0.80 , 5 A TO-220, TO-220FP, DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF7NK30Z 300 V

STP7NK40Z - STP7NK40ZFPSTD7NK40Z - STD7NK40Z-1N-CHANNEL 400V-0.85-5.4A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP7NK40Z 400 V

STD7NM80, STD7NM80-1STF7NM80, STP7NM80N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) IDSTD7NM80 800 V

STD7NM50N - STD7NM50N-1STF7NM50N - STP7NM50NN-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)213STD7NM50N 550V

STD7NB20STD7NB20-1N-CHANNEL 200V - 0.3 - 7A DPAK/IPAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTD7NB20 200 V

STD7N52K3, STP7N52K3DatasheetN-channel 525 V, 0.72 typ., 6 A, MDmesh K3 Power MOSFETs in DPAK and TO-220 packagesFeaturesVDS RDS(on) max. ID PTOTOrder codesTABTABSTD7N52K3525 V 0.85 6 A 90 W32STP7N52K3132 100% avalanche testedDPAK TO-2201 Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recover

STD7NM50N - STD7NM50N-1STF7NM50N - STP7NM50NN-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)213STD7NM50N 550V

STD7NM80, STD7NM80-1STF7NM80, STP7NM80N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) IDSTD7NM80 800 V

STD7NS20STD7NS20-1N-CHANNEL 200V - 0.35 - 7A DPAK / IPAKMESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD7NS20 200 V

STD7NK40ZT4, STP7NK40Z, STP7NK40ZFPDatasheetN-channel 400 V, 0.85 typ., 5.4 A, SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packagesFeaturesTAB32VDS RDS(on) max. ID PTOTOrder code1DPAKSTD7NK40ZT4 70 WTABSTP7NK40Z 400 V 1 5.4 A 70 WSTP7NK40ZFP 25 W33 22 11TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche testedD(2,

STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95 5 ATABSTU7N60M2TAB Extremely low gate charge332 Lower RDS(on) x area vs previous generation21