STD7NM50N Todos los transistores

 

STD7NM50N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STD7NM50N
   Código: D7NM50N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 45 W
   Voltaje máximo drenador - fuente |Vds|: 500 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 5 nS
   Conductancia de drenaje-sustrato (Cd): 35 pF
   Resistencia entre drenaje y fuente RDS(on): 0.78 Ohm
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de MOSFET STD7NM50N

 

STD7NM50N Datasheet (PDF)

 ..1. Size:424K  st
std7nm50n std7nm50n-1 stf7nm50n stp7nm50n.pdf

STD7NM50N
STD7NM50N

STD7NM50N - STD7NM50N-1STF7NM50N - STP7NM50NN-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)213STD7NM50N 550V

 ..2. Size:426K  st
std7nm50n-1 std7nm50n stf7nm50n stp7nm50n.pdf

STD7NM50N
STD7NM50N

STD7NM50N - STD7NM50N-1STF7NM50N - STP7NM50NN-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)213STD7NM50N 550V

 8.1. Size:596K  st
std7nm60n stf7nm60n stu7nm60n.pdf

STD7NM50N
STD7NM50N

STD7NM60N, STF7NM60N, STU7NM60NDatasheetN-channel 600 V, 0.8 typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages FeaturesVDS RDS(on) max. IDOrder code PackageSTD7NM60N DPAKSTF7NM60N 600 V 0.9 5 A TO-220FPSTU7NM60N IPAKD(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceG(1)Applications

 8.2. Size:986K  st
std7nm64n.pdf

STD7NM50N
STD7NM50N

STD7NM64NN-channel 640 V, 5 A, 0.88 typ., MDmesh II Power MOSFET in a DPAK packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDSTD7NM64N 640 V 1.05 5 A TAB 100% avalanche tested3 Low input capacitance and gate charge1 Low gate input resistanceDPAKApplications Switching applicationsDescriptionFigure 1. Internal schematic

 8.3. Size:882K  st
std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf

STD7NM50N
STD7NM50N

STD7NM60N, STF7NM60NSTP7NM60N, STU7NM60NN-channel 600 V, 5 A, 0.76 , DPAK, TO-220FP, TO-220, IPAKsecond generation MDmesh Power MOSFETFeaturesVDSS @ RDS(on) Order codes ID3TJmax max.2 3211STD7NM60NTO-220IPAKSTF7NM60N650 V

 8.4. Size:969K  st
std7nm80 std7nm80-1 stf7nm80 stp7nm80.pdf

STD7NM50N
STD7NM50N

STD7NM80, STD7NM80-1STF7NM80, STP7NM80N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) IDSTD7NM80 800 V

 8.5. Size:971K  st
std7nm80-1 std7nm80 stf7nm80 stp7nm80.pdf

STD7NM50N
STD7NM50N

STD7NM80, STD7NM80-1STF7NM80, STP7NM80N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) IDSTD7NM80 800 V

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


STD7NM50N
  STD7NM50N
  STD7NM50N
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C

 

 

 
Back to Top