STD80N6F6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STD80N6F6Automotive-grade N-channel 60 V, 4.4 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a DPAK packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTD80N6F6 60 V 5 m 80 A(1)1. Current limited by package3 Designed for automotive applications and AEC-Q101 qualified1 Low gate chargeDPAK Very low on-resistance Hi

STD80N4F6Automotive-grade N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABSTD80N4F6 40 V 6 m 80 A3 Designed for automotive applications and 1AEC-Q101 qualifiedDPAK Low gate charge Very low on-resistance High avalanche ruggednessFigure 1. In

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220Datasheet - production dataFeaturesTABVDS @ RDS(on) 3Order codes ID PTOTTJmax max1DPAK 3STD80N10F7 0.01 70 A 85 W21TO-220FP STF80N10F7 0.01 40 A 30 W100 VTABTAB STH80N10F7-2 0.0095 80 A

GreenProductSTU/D802SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.35 @ VGS=10V80V 25A TO-252 and TO-251 Package.50 @ VGS=4.5VDDDGGSSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-P