STD80N6F6 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD80N6F6
Marking Code: 80N6F6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 147 nC
trⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: DPAK
STD80N6F6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
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