All MOSFET. STD80N6F6 Datasheet

 

STD80N6F6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD80N6F6
   Marking Code: 80N6F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 147 nC
   trⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: DPAK

 STD80N6F6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD80N6F6 Datasheet (PDF)

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 std80n6f6.pdf

STD80N6F6 STD80N6F6

STD80N6F6Automotive-grade N-channel 60 V, 4.4 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a DPAK packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTD80N6F6 60 V 5 m 80 A(1)1. Current limited by package3 Designed for automotive applications and AEC-Q101 qualified1 Low gate chargeDPAK Very low on-resistance Hi

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 std80n4f6.pdf

STD80N6F6 STD80N6F6

STD80N4F6Automotive-grade N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABSTD80N4F6 40 V 6 m 80 A3 Designed for automotive applications and 1AEC-Q101 qualifiedDPAK Low gate charge Very low on-resistance High avalanche ruggednessFigure 1. In

 8.2. Size:1361K  st
 std80n10f7 stf80n10f7 sth80n10f7-2 stp80n10f7.pdf

STD80N6F6 STD80N6F6

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220Datasheet - production dataFeaturesTABVDS @ RDS(on) 3Order codes ID PTOTTJmax max1DPAK 3STD80N10F7 0.01 70 A 85 W21TO-220FP STF80N10F7 0.01 40 A 30 W100 VTABTAB STH80N10F7-2 0.0095 80 A

 9.1. Size:123K  samhop
 stu802s std802s.pdf

STD80N6F6 STD80N6F6

GreenProductSTU/D802SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.35 @ VGS=10V80V 25A TO-252 and TO-251 Package.50 @ VGS=4.5VDDDGGSSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-P

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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