IXFN25N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXFN25N90
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 600 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 240 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm
   Paquete / Cubierta: SOT227B

Búsqueda de reemplazo de MOSFET IXFN25N90

IXFN25N90 Datasheet (PDF)

..1. Size:141K ixys
ixfn26n90 ixfn25n90.pdf

VDSS ID (cont) RDS(on) trrHiPerFETTM Power MOSFETs900 V 26 A 0.30 W 250 ns IXFN 26N90Single Die MOSFET IXFN 25N90 900 V 25 A 0.33 W 250 nsN-Channel Enhancement ModeDAvalanche Rated, High dv/dt, Low trrGPreliminary data sheetSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 900 VSVDGR TJ = 25C to 150C; RGS =

7.1. Size:162K ixys
ixfk25n80 ixfk27n80 ixfn25n80 ixfn27n80.pdf

Not for New DesignsVDSS ID25 RDS(on)IXFK 27N80 800 V 27 A 0.30 HiPerFETTM Power MOSFETs IXFK 25N80 800 V 25 A 0.35 N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrIXFN 27N80 800 V 27 A 0.30 IXFN 25N80 800 V 25 A 0.35 TO-264 AA (IXFK)Symbol Test Conditions Maximum Ratings

7.2. Size:151K ixys
ixfk27n80 ixfn27n80 ixfk25n80 ixfn25n80.pdf

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsN-Channel Enhancement ModeIXFK 27N80 800 V 27 A 0.30 WAvalanche Rated, High dv/dt, Low trrIXFK 25N80 800 V 25 A 0.35 WIXFN 27N80 800 V 27 A 0.30 WIXFN 25N80 800 V 25 A 0.35 WSymbol Test Conditions Maximum Ratings TO-264 AA (IXFK)IXFK IXFNVDSS TJ = 25C to 150C 800 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 800 VVGS Continuo

9.1. Size:283K 1
ixfn230n10.pdf

Advanced Technical InformationHiPerFETTMIXFN 230N10 VDSS = 100 VPower MOSFETsID25 = 230 ASingle Die MOSFET RDS(on) = 6 mWDtrr

9.2. Size:131K ixys
ixfn210n30p3.pdf

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFN210N30P3Power MOSFET ID25 = 192A RDS(on) 14.5m trr 250nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M

9.3. Size:203K ixys
ixfn200n06.pdf

!VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mWPower MOSFETsIXFN 180 N07 70 V 180 A 7 mWIXFN 200 N07 70 V 200 A 6 mWN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrtrr 250 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150

9.4. Size:108K ixys
ixfn24n100.pdf

HiPerFETTM Power VDSS = 1000VIXFN24N100MOSFET ID25 = 24A RDS(on) 390m N-Channel Enhancement Modetrr 250nsAvalanche RatedFast Intrinsic DiodeminiBLOC, SOT-227 BSymbol Test Conditions Maximum RatingsE153432VDSS TJ = 25C to 150C 1000 VSGVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VV

9.5. Size:94K ixys
ixfn200n06 ixfn200n07.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mPower MOSFETsIXFN 200 N07 70 V 200 A 6 mN-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trrSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C N07 70 VVDGR TJ = 25C to 150C; RGS

9.6. Size:190K ixys
ixfn180n07 ixfn200n07 ixfn200n06.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mWPower MOSFETsIXFN 180 N07 70 V 180 A 7 mWIXFN 200 N07 70 V 200 A 6 mWN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrtrr 250 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C N07 70 VN06 60 VSVDGR TJ = 25C to 150C; RGS = 1 MW N07 70 VGN06

9.7. Size:143K ixys
ixfn230n20t.pdf

Advance Technical InformationGigaMOSTM VDSS = 200VIXFN230N20TID25 = 230APower MOSFET RDS(on) 7.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227Fast Intrinsic DiodeE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C, RGS = 1M

9.8. Size:86K ixys
ixfn200n10p.pdf

VDSS = 100 VIXFN 200N10PPolarTM HiPerFETID25 = 200 APower MOSFET RDS(on) 7.5 m N-Channel Enhancement Modetrr 150 nsFast Intrinsic DiodeAvalanche RatedminiBLOC, SOT-227 B (IXFN)Symbol Test Conditions Maximum RatingsE153432SVDSS TJ = 25C to 175C 100 VGVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGS C

9.9. Size:124K ixys
ixfn260n17t.pdf

Advance Technical InformationGigaMOSTM VDSS = 170VIXFN260N17TID25 = 245APower MOSFET RDS(on) 6.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227E153432Fast Intrinsic DiodeSGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 170 VVDGR TJ = 25C to 175C, RGS = 1M 170

9.10. Size:113K ixys
ixfn280n07.pdf

HiPerFETTM VDSS = 70VIXFN280N07ID25 = 280APower MOSFETs RDS(on) 5m Single Die MOSFETtrr 250nsN-Channel Enhancement ModeAvalanche RatedHigh dV/dt, Low trrminiBLOC, SOT-227 B (IXFN)E153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 70 VVDGR TJ = 25C to 150C, RGS = 1M 70 VVGSS

Otros transistores... IXFN150N15 , IXFN170N10 , IXFN180N07 , IXFN180N10 , IXFN180N20 , IXFN200N07 , IXFN230N10 , IXFN24N100 , EMB04N03H , IXFN26N90 , IXFN27N80 , IXFN280N07 , IXFN32N60 , IXFN340N07 , IXFN34N80 , IXFN36N100 , IXFN36N60 .

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