IRFU9N20DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFU9N20DPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.4 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 97 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO-251

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IRFU9N20DPBF Datasheet (PDF)

..1. Size:226K international rectifier
irfr9n20dpbf irfu9n20dpbf.pdf pdf_icon

PD - 95376AIRFR9N20DPbFSMPS MOSFET IRFU9N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC convertersl Lead-Free 200V 0.38 9.4ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltageand Cu

5.1. Size:261K inchange semiconductor
irfu9n20d.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFU9N20DFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

9.1. Size:33K 1
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9.2. Size:298K 1
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9.3. Size:538K 1
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9.4. Size:46K 1
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9.5. Size:1347K 1
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PD - 96048IRFR9024NCPbFIRFU9024NCPbF(IRFR9024NCPbF)(IRFU9024NCPbF) Lead-Freewww.irf.com 105/31/06IRFR/U9024NCPbF2 www.irf.comIRFR/U9024NCPbFwww.irf.com 3IRFR/U9024NCPbF4 www.irf.comIRFR/U9024NCPbFwww.irf.com 5IRFR/U9024NCPbF6 www.irf.comIRFR/U9024NCPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductanc

9.6. Size:298K 1
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9.7. Size:550K 1
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9.8. Size:1864K international rectifier
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9.9. Size:1384K international rectifier
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PD - 95015AIRFR9024NPbFIRFU9024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U9024NPbF2 www.irf.comIRFR/U9024NPbFwww.irf.com 3IRFR/U9024NPbF4 www.irf.comIRFR/U9024NPbFwww.irf.com 5IRFR/U9024NPbF6 www.irf.comIRFR/U9024NPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage In

9.10. Size:1828K international rectifier
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9.11. Size:252K international rectifier
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PD - 95064AIRFR9310PbFIRFU9310PbFl P-ChannelHEXFET Power MOSFETl Surface Mount (IRFR9310)l Straight Lead (IRFU9310)DVDSS = -400Vl Advanced Process Technologyl Fast Switchingl Fully Avalanche RatedRDS(on) = 7.0Gl Lead-FreeID = -1.8ADescriptionSThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievelow on-

9.12. Size:233K international rectifier
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Document Number: 90350 www.vishay.comC-65Document Number: 90350 www.vishay.comC-66Document Number: 90350 www.vishay.comC-67Document Number: 90350 www.vishay.comC-68Document Number: 90350 www.vishay.comC-69Document Number: 90350 www.vishay.comC-70Document Number: 90350 www.vishay.comC-71Document Number: 90350 www.vishay.comC-72Legal Disclaimer NoticeVish

9.13. Size:257K international rectifier
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PD-95020AIRFR9120NPbFIRFU9120NPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR9120N)l Straight Lead (IRFU9120N)l Advanced Process TechnologyRDS(on) = 0.48Gl Fast Switchingl Fully Avalanche RatedID = -6.6ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

9.14. Size:1201K international rectifier
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9.15. Size:552K international rectifier
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9.16. Size:1809K international rectifier
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9.17. Size:279K international rectifier
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PD - 95375AIRFR/U9214PbFHEXFET Power MOSFETl P-Channel DVDSS = -250Vl Surface Mount (IRFR9214)l Straight Lead (IRFU9214)RDS(on) = 3.0l Advanced Process TechnologyGl Fast Switchingl Fully Avalanche Rated ID = -2.7ASl Lead-FreeDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve lowon-resistance pe

9.18. Size:1102K international rectifier
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9.19. Size:276K international rectifier
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9.20. Size:1077K international rectifier
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9.21. Size:33K samsung
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9.22. Size:1477K vishay
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IRFR9110, IRFU9110, SiHFR9110, SiHFU9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.2 Repetitive Avalanche RatedQg (Max.) (nC) 8.7 Surface Mount (IRFR9110, SiHFR9110)Qgs (nC) 2.2 Straight Lead (IRFU9110, SiHFU9110) Available in Tape

9.23. Size:798K vishay
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IRFR9110, IRFU9110, SiHFR9110, SiHFU9110www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2 Surface Mount (IRFR9110, SiHFR9110)Qg (Max.) (nC) 8.7 Straight Lead (IRFU9110, SiHFU9110)Qgs (nC) 2.2 Available in Tape and ReelQgd (nC) 4.1 P-Channel

9.24. Size:1371K vishay
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IRFR9110, IRFU9110, SiHFR9110, SiHFU9110Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* Surface Mount (IRFR9110/SiHFR9110)COMPLIANTQg (Max.) (nC) 8.7 Straight Lead (IRFU9110/SiHFU9110)Qgs (nC) 2.2 Available in Tape and ReelQgd (nC) 4.1

9.25. Size:2138K vishay
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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200Definition Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 1.5 Repetitive Avalanche RatedQg (Max.) (nC) 20 Surface Mount (IRFR9220, SiHFR9220)Qgs (nC) 3.3 Straight Lead (IRFUFU9220, SiHFU9220)Qgd (nC) 11 A

9.26. Size:1968K vishay
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IRFR9024, IRFU9024, SiHFR9024, SiHFU9024Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRFR9024/SiHFR9024)RoHS*COMPLIANTQg (Max.) (nC) 19 Straight Lead (IRFU9024/SiHFU9024)Qgs (nC) 5.4 Available in Tape and ReelQgd (nC) 11 P

9.27. Size:1117K vishay
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IRFR9014, IRFU9014, SiHFR9014, SiHFU9014www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche Rated Surface Mount (IRFR9014, SiHFR9014)RDS(on) ()VGS = - 10 V 0.50 Straight Lead (IRFU9014, SiHFU9014)Qg (Max.) (nC) 12 Available in Tape and ReelQgs (nC) 3.8 P-Channel Fast Switch

9.28. Size:1892K vishay
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IRFR9120, IRFU9120, SiHFR9120, SiHFU9120Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60RoHS* Surface Mount (IRFR9120/SiHFR9120)COMPLIANTQg (Max.) (nC) 18 Straight Lead (IRFU9120/SiHFU9120)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 9.0

9.29. Size:1578K vishay
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IRFR9210, IRFU9210, SiHFR9210, SiHFU9210Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0RoHS* Surface Mount (IRFR9210/SiHFR9210)Qg (Max.) (nC) 8.9COMPLIANT Straight Lead (IRFU9210/SiHFU9210)Qgs (nC) 2.1Qgd (nC) 3.9 Available in Tape and ReelConf

9.30. Size:353K vishay
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface Mountable (Order As IRFR9020,VDS (V) - 50 SiHFR9020) Straight Lead Option (Order As IRFU9020,RDS(on) ()VGS = - 10 V 0.28SiHFU9020)Qg (Max.) (nC) 14 Repetitive Avalanche Ratings Qgs (nC) 6.5 Dynamic dV/dt Rating Simple Drive Requirements

9.31. Size:803K vishay
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IRFR9210, IRFU9210, SiHFR9210, SiHFU9210www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0 Surface Mount (IRFR9210, SiHFR9210)Qg (Max.) (nC) 8.9 Straight Lead (IRFU9210, SiHFU9210)Qgs (nC) 2.1 Available in Tape and ReelQgd (nC) 3.9 P-Channel

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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5RoHS* Surface Mount (IRFR9220/SiHFR9220)Qg (Max.) (nC) 20COMPLIANT Straight Lead (IRFUFU9220/SiHFU9220)Qgs (nC) 3.3 Available in Tape and ReelQgd (nC) 11

9.33. Size:1570K vishay
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 50DefinitionRDS(on) ()VGS = - 10 V 0.28 Surface Mountable (Order As IRFR9020,Qg (Max.) (nC) 14SiHFR9020)Qgs (nC) 6.5 Straight Lead Option (Order As IRFU9020,SiHFU9020)Qgd (nC) 6.5 Repetitive Avalanche Ratings

9.34. Size:1365K vishay
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IRFR9010, IRFU9010, SiHFR9010, SiHFU9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010)RDS(on) ()VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt RatingQ

9.35. Size:151K vishay
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IRFR9214, IRFU9214, SiHFR9214, SiHFU9214Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY P-ChannelVDS (V) - 250 Surface Mount (IRFR9214/SiHFR9214) AvailableRDS(on) ()VGS = - 10 V 3.0 Straight Lead (IRFU9214/SiHFU9214) RoHS*Qg (Max.) (nC) 14COMPLIANT Advanced Process TechnologyQgs (nC) 3.1 Fast SwitchingQgd (nC) 6.8 Fully Avalanche RatedC

9.36. Size:1141K vishay
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IRFR9024, IRFU9024, SiHFR9024, SiHFU9024www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRFR9024, SiHFR9024)Qg (Max.) (nC) 19 Straight Lead (IRFU9024, SiHFU9024)Qgs (nC) 5.4 Available in Tape and ReelQgd (nC) 11 P-ChannelC

9.37. Size:1885K vishay
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9.38. Size:827K vishay
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IRFR9310, IRFU9310, SiHFR9310, SiHFU9310Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY P-ChannelVDS (V) - 400Available Surface Mount (IRFR9310/SiHFR9310)RDS(on) ()VGS = - 10 V 7.0RoHS* Straight Lead (IRFU9310/SiHFU9310)Qg (Max.) (nC) 13COMPLIANT Advanced Process TechnologyQgs (nC) 3.2 Fast SwitchingQgd (nC) 5.0 Fully Avalanche Rated

9.39. Size:770K vishay
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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5 Surface Mount (IRFR9220, SiHFR9220)Qg (Max.) (nC) 20 Straight Lead (IRFUFU9220, SiHFU9220)Qgs (nC) 3.3 Available in Tape and ReelQgd (nC) 11 P-Channel

9.40. Size:1891K vishay
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IRFR9014, IRFU9014, SiHFR9014, SiHFU9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60 Definition Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 0.50 Repetitive Avalanche RatedQg (Max.) (nC) 12 Surface Mount (IRFR9014, SiHFR9014)Qgs (nC) 3.8 Straight Lead (IRFU9014, SiHFU9014) Available in Tape

9.41. Size:2009K vishay
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IRFR9014, IRFU9014, SiHFR9014, SiHFU9014Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* Surface Mount (IRFR9014/SiHFR9014)COMPLIANTQg (Max.) (nC) 12 Straight Lead (IRFU9014/SiHFU9014)Qgs (nC) 3.8 Available in Tape and ReelQgd (nC) 5.1

9.42. Size:770K infineon
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9.43. Size:529K infineon
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AUIRFR9024N AUTOMOTIVE GRADE AUIRFU9024N Features HEXFET Power MOSFET Advanced Planar Technology VDSS -55V Low On-Resistance P-Channel RDS(on) max. 0.175 Dynamic dv/dt Rating ID -11A 150C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Complian

9.44. Size:803K cn vbsemi
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IRFU9014PBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.066 at VGS = - 10 V - 20APPLICATIONS- 60 40 nC at VGS = - 4.5 V - 180.080 Load SwitchTO-251SGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)

9.45. Size:822K cn vbsemi
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IRFU9110PBFwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.215 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 110.234 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC Co

9.46. Size:260K inchange semiconductor
irfu9024n.pdf pdf_icon

isc P-Channel MOSFET Transistor IRFU9024NFEATURESStatic drain-source on-resistance:RDS(on)175m(@V = -10V; I = -6.6A)GS DAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFast switching application.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

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