IRFY130M Todos los transistores

 

IRFY130M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFY130M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO-257AA
 

 Búsqueda de reemplazo de IRFY130M MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRFY130M Datasheet (PDF)

 ..1. Size:162K  international rectifier
irfy130m.pdf pdf_icon

IRFY130M

PD - 94183IRFY130,IRFY130MPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130 0.18 14.4A GlassIRFY130M 0.18 14.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on

 7.1. Size:164K  international rectifier
irfy130c.pdf pdf_icon

IRFY130M

PD - 91286DIRFY130C,IRFY130CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130C 0.18 14.4A CeramicIRFY130CM 0.18 14.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves ve

 7.2. Size:164K  international rectifier
irfy130.pdf pdf_icon

IRFY130M

PD - 94183IRFY130,IRFY130MPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130 0.18 14.4A GlassIRFY130M 0.18 14.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on

 7.3. Size:163K  international rectifier
irfy130cm.pdf pdf_icon

IRFY130M

PD - 91286DIRFY130C,IRFY130CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130C 0.18 14.4A CeramicIRFY130CM 0.18 14.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves ve

Otros transistores... IRFU9N20DPBF , IRFUC20PBF , IRFY044CM , IRFY044M , IRFY110 , IRFY110C , IRFY11N50CMA , IRFY130CM , 2N7000 , IRFY140CM , IRFY140M , IRFY140-T257 , IRFY210 , IRFY210C , IRFY220 , IRFY230 , IRFY230C .

History: RJK1535DPJ | NTMFS4823NT1G | IXFV26N50PS | MIC94050YM4TR | SI4825DY | P1820BD | KI1400DL

 

 
Back to Top

 


 
.