All MOSFET. IRFY130M Datasheet

 

IRFY130M Datasheet and Replacement


   Type Designator: IRFY130M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-257AA
 

 IRFY130M substitution

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IRFY130M Datasheet (PDF)

 ..1. Size:162K  international rectifier
 irfy130m.pdf pdf_icon

IRFY130M

PD - 94183IRFY130,IRFY130MPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130 0.18 14.4A GlassIRFY130M 0.18 14.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on

 7.1. Size:164K  international rectifier
 irfy130c.pdf pdf_icon

IRFY130M

PD - 91286DIRFY130C,IRFY130CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130C 0.18 14.4A CeramicIRFY130CM 0.18 14.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves ve

 7.2. Size:164K  international rectifier
 irfy130.pdf pdf_icon

IRFY130M

PD - 94183IRFY130,IRFY130MPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130 0.18 14.4A GlassIRFY130M 0.18 14.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on

 7.3. Size:163K  international rectifier
 irfy130cm.pdf pdf_icon

IRFY130M

PD - 91286DIRFY130C,IRFY130CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130C 0.18 14.4A CeramicIRFY130CM 0.18 14.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves ve

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Datasheet: IRFU9N20DPBF , IRFUC20PBF , IRFY044CM , IRFY044M , IRFY110 , IRFY110C , IRFY11N50CMA , IRFY130CM , 2N7000 , IRFY140CM , IRFY140M , IRFY140-T257 , IRFY210 , IRFY210C , IRFY220 , IRFY230 , IRFY230C .

History: 2SK321 | 2SK3265 | 2SK3309 | SI2341 | GSM2311 | AO6810 | MTP3415KN3

Keywords - IRFY130M MOSFET datasheet

 IRFY130M cross reference
 IRFY130M equivalent finder
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 IRFY130M substitution
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