IRFY230 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFY230
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 39 nC
   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO-257AA

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IRFY230 Datasheet (PDF)

..1. Size:50K semelab
irfy230.pdf

IRFY230MECHANICAL DATADimensions in mm (inches)NCHANNEL4.83 (0.190)POWER MOSFET5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)1.14 (0.045)FOR HIREL3.56 (0.140)APPLICATIONSDia.3.81 (0.150)VDSS 200V1 2 3ID(cont) 9ARDS(on) 0.400.64 (0.025)Dia.0.89 (0.035)FEATURES2.54 (0.100) 3.05 (0.120)BSC BSC HERMETICALLY SEALED TO257AA

0.1. Size:11K semelab
irfy230c.pdf

IRFY230CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 200V ID = 9A RDS(ON) = 0.4 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, JAN

9.1. Size:161K international rectifier
irfy240c.pdf

PD - 91289CIRFY240C,IRFY240CMPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY240 0.18 16A GlassIRFY240M 0.18 16A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-st

9.2. Size:161K international rectifier
irfy240.pdf

PD - 94187IRFY240,IRFY240MPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY240 0.18 16A GlassIRFY240M 0.18 16A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-state

9.3. Size:214K international rectifier
irfy240cm.pdf

PD-91289EIRFY240C,IRFY240CMPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 16A Ceramic IRFY240CM 0.18 16A CeramicTO-257AAHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very lo

9.4. Size:11K semelab
irfy210.pdf

IRFY210Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 200V ID = 1.8A RDS(ON) = 1.725 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,

9.5. Size:11K semelab
irfy220.pdf

IRFY220Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 200V ID = 4A RDS(ON) = 0.92 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, JAN

9.6. Size:11K semelab
irfy210c.pdf

IRFY210CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 200V ID = 1.8A RDS(ON) = 1.725 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,

9.7. Size:752K semelab
irfy240m.pdf

N-CHANNEL POWER MOSFET IRFY240 / IRFY240M Low RDS(on) MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 200V VGS Gate Source Voltage 20V ID Tc = 25C

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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