IRFY230 Todos los transistores

 ..1. Size:50K  semelab
 irfy230.pdf

IRFY230 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 4.83 (0.190) POWER MOSFET 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) FOR HI REL 3.56 (0.140) APPLICATIONS Dia. 3.81 (0.150) VDSS 200V 1 2 3 ID(cont) 9A RDS(on) 0.40 0.64 (0.025) Dia. 0.89 (0.035) FEATURES 2.54 (0.100) 3.05 (0.120) BSC BSC HERMETICALLY SEALED TO 257AA

 0.1. Size:11K  semelab
 irfy230c.pdf

IRFY230C Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 200V ID = 9A RDS(ON) = 0.4 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, JAN

 9.1. Size:161K  international rectifier
 irfy240c.pdf

PD - 91289C IRFY240C,IRFY240CM POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 16A Glass IRFY240M 0.18 16A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-st

 9.2. Size:161K  international rectifier
 irfy240.pdf

PD - 94187 IRFY240,IRFY240M POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 16A Glass IRFY240M 0.18 16A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-state

 9.3. Size:214K  international rectifier
 irfy240cm.pdf

PD-91289E IRFY240C,IRFY240CM POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 16A Ceramic IRFY240CM 0.18 16A Ceramic TO-257AA HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very lo

 9.4. Size:11K  semelab
 irfy210.pdf

IRFY210 Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 200V ID = 1.8A RDS(ON) = 1.725 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,

 9.5. Size:11K  semelab
 irfy220.pdf

IRFY220 Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 200V ID = 4A RDS(ON) = 0.92 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, JAN

 9.6. Size:11K  semelab
 irfy210c.pdf

IRFY210C Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 200V ID = 1.8A RDS(ON) = 1.725 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,

 9.7. Size:752K  semelab
 irfy240m.pdf

N-CHANNEL POWER MOSFET IRFY240 / IRFY240M Low RDS(on) MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage 200V VGS Gate Source Voltage 20V ID Tc = 25 C