All MOSFET. IRFY230 Datasheet

 

IRFY230 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFY230
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-257AA

 IRFY230 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFY230 Datasheet (PDF)

 ..1. Size:50K  semelab
irfy230.pdf

IRFY230
IRFY230

IRFY230MECHANICAL DATADimensions in mm (inches)NCHANNEL4.83 (0.190)POWER MOSFET5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)1.14 (0.045)FOR HIREL3.56 (0.140)APPLICATIONSDia.3.81 (0.150)VDSS 200V1 2 3ID(cont) 9ARDS(on) 0.400.64 (0.025)Dia.0.89 (0.035)FEATURES2.54 (0.100) 3.05 (0.120)BSC BSC HERMETICALLY SEALED TO257AA

 0.1. Size:11K  semelab
irfy230c.pdf

IRFY230

IRFY230CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 200V ID = 9A RDS(ON) = 0.4 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, JAN

 9.1. Size:161K  international rectifier
irfy240c.pdf

IRFY230
IRFY230

PD - 91289CIRFY240C,IRFY240CMPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY240 0.18 16A GlassIRFY240M 0.18 16A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-st

 9.2. Size:161K  international rectifier
irfy240.pdf

IRFY230
IRFY230

PD - 94187IRFY240,IRFY240MPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY240 0.18 16A GlassIRFY240M 0.18 16A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-state

 9.3. Size:214K  international rectifier
irfy240cm.pdf

IRFY230
IRFY230

PD-91289EIRFY240C,IRFY240CMPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 16A Ceramic IRFY240CM 0.18 16A CeramicTO-257AAHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very lo

 9.4. Size:11K  semelab
irfy210.pdf

IRFY230

IRFY210Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 200V ID = 1.8A RDS(ON) = 1.725 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,

 9.5. Size:11K  semelab
irfy220.pdf

IRFY230

IRFY220Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 200V ID = 4A RDS(ON) = 0.92 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, JAN

 9.6. Size:11K  semelab
irfy210c.pdf

IRFY230

IRFY210CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 200V ID = 1.8A RDS(ON) = 1.725 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,

 9.7. Size:752K  semelab
irfy240m.pdf

IRFY230
IRFY230

N-CHANNEL POWER MOSFET IRFY240 / IRFY240M Low RDS(on) MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 200V VGS Gate Source Voltage 20V ID Tc = 25C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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