IRFY330 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFY330
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 39 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-257AB

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IRFY330 Datasheet (PDF)

..1. Size:751K semelab
irfy330.pdf

N-CHANNEL POWER MOSFET IRFY330 BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 400V VGS Gate Source Voltage 20V ID Tc = 25C Continuo

0.1. Size:11K semelab
irfy330c.pdf

IRFY330CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 5.5A RDS(ON) = 1.2 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, J

9.1. Size:143K international rectifier
irfy340cm.pdf

PD - 91290CIRFY340C,IRFY340CMPOWER MOSFET 400V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY340C 0.55 8.7A CeramicIRFY340CM 0.55 8.7A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very l

9.2. Size:145K international rectifier
irfy340c.pdf

9.3. Size:145K international rectifier
irfy340.pdf

PD - 94189IRFY340,IRFY340MPOWER MOSFET 400V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY340 0.55 8.7A GlassIRFY340M 0.55 8.7A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-sta

9.4. Size:143K international rectifier
irfy340m.pdf

IRFY340MPD - 94189IRFY340,IRFY340MPOWER MOSFET 400V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY340 0.55 8.7A GlassIRFY340M 0.55 8.7A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design

9.5. Size:11K semelab
irfy310c.pdf

IRFY310CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 1.2A RDS(ON) = 4.15 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,

9.6. Size:11K semelab
irfy320c.pdf

IRFY320CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 3.3A RDS(ON) = 1.8 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, J

9.7. Size:11K semelab
irfy320.pdf

IRFY320Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 3.3A RDS(ON) = 1.8 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, JA

9.8. Size:11K semelab
irfy310.pdf

IRFY310Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 1.2A RDS(ON) = 4.15 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, J

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