N-CHANNEL POWER MOSFET IRFY330 BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 400V VGS Gate Source Voltage 20V ID Tc = 25C Continuo

IRFY330CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 5.5A RDS(ON) = 1.2 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, J

PD - 91290CIRFY340C,IRFY340CMPOWER MOSFET 400V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY340C 0.55 8.7A CeramicIRFY340CM 0.55 8.7A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very l

PD - 91290CIRFY340C,IRFY340CMPOWER MOSFET 400V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY340C 0.55 8.7A CeramicIRFY340CM 0.55 8.7A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very l

PD - 94189IRFY340,IRFY340MPOWER MOSFET 400V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY340 0.55 8.7A GlassIRFY340M 0.55 8.7A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-sta

IRFY340MPD - 94189IRFY340,IRFY340MPOWER MOSFET 400V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY340 0.55 8.7A GlassIRFY340M 0.55 8.7A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design

IRFY310CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 1.2A RDS(ON) = 4.15 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,

IRFY320CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 3.3A RDS(ON) = 1.8 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, J

IRFY320Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 3.3A RDS(ON) = 1.8 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, JA

IRFY310Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 1.2A RDS(ON) = 4.15 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, J