IRFY420 Todos los transistores

 ..1. Size:98K  semelab
 irfy420.pdf

 0.1. Size:11K  semelab
 irfy420c.pdf

IRFY420C Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 500V ID = 25A RDS(ON) = 0.23 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, J

 9.1. Size:169K  international rectifier
 irfy430c.pdf

PD - 91291C IRFY430C,IRFY430CM POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430C 1.5 4.5A Ceramic IRFY430CM 1.5 4.5A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo

 9.2. Size:183K  international rectifier
 irfy440cm.pdf

PD-91292D IRFY440C, IRFY440CM POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY440C 0.85 7.0A Ceramic IRFY440CM 0.85 7.0A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-257AA The efficient geometry design achieves very lo

 9.3. Size:132K  international rectifier
 irfy440.pdf

PD - 94193 IRFY440,IRFY440M POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY440 0.85 7.0A Glass IRFY440M 0.85 7.0A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-sta

 9.4. Size:167K  international rectifier
 irfy430cm.pdf

PD - 91291C IRFY430C,IRFY430CM POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430C 1.5 4.5A Ceramic IRFY430CM 1.5 4.5A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo

 9.5. Size:168K  international rectifier
 irfy430.pdf

PD - 94191 IRFY430,IRFY430M POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430 1.5 4.5A Glass IRFY430M 1.5 4.5A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-stat

 9.6. Size:133K  international rectifier
 irfy440c.pdf

PD - 91292C IRFY440C,IRFY440CM POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY440C 0.85 7.0A Glass IRFY440CM 0.85 7.0A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low o

 9.7. Size:33K  semelab
 irfy440-t257.pdf

IRFY440-T257 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) FOR HI REL APPLICATIONS 3.56 (0.140) Dia. 3.81 (0.150) VDSS 500V 1 2 3 ID(cont) 5.5A RDS(on) 0.85 0.64 (0.025) Dia. 0.89 (0.035) FEATURES 2.54 (0.100) 3.05 (0.120) BSC BSC HERMETICALLY SEALED TO257AA

 9.8. Size:828K  semelab
 irfy430m.pdf

N-CHANNEL POWER MOSFET IRFY430 / IRFY430M BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage 500V VGS Gate Source Voltage 20V ID Tc = 25 C