IRFY420 - Даташиты. Аналоги. Основные параметры

IRFY420CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 500V ID = 25A RDS(ON) = 0.23 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, J

PD - 91291CIRFY430C,IRFY430CMPOWER MOSFET500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY430C 1.5 4.5A CeramicIRFY430CM 1.5 4.5A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very lo

PD-91292DIRFY440C, IRFY440CMPOWER MOSFET 500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY440C 0.85 7.0A CeramicIRFY440CM 0.85 7.0A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-257AAThe efficient geometry design achieves very lo

PD - 94193IRFY440,IRFY440MPOWER MOSFET 500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY440 0.85 7.0A GlassIRFY440M 0.85 7.0A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-sta

PD - 91291CIRFY430C,IRFY430CMPOWER MOSFET500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY430C 1.5 4.5A CeramicIRFY430CM 1.5 4.5A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very lo

PD - 94191IRFY430,IRFY430MPOWER MOSFET500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY430 1.5 4.5A GlassIRFY430M 1.5 4.5A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-stat

PD - 91292CIRFY440C,IRFY440CMPOWER MOSFET 500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY440C 0.85 7.0A GlassIRFY440CM 0.85 7.0A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low o

IRFY440-T257MECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)1.14 (0.045)FOR HIRELAPPLICATIONS3.56 (0.140)Dia.3.81 (0.150)VDSS 500V1 2 3ID(cont) 5.5ARDS(on) 0.850.64 (0.025)Dia.0.89 (0.035) FEATURES2.54 (0.100) 3.05 (0.120)BSC BSC HERMETICALLY SEALED TO257AA

N-CHANNEL POWER MOSFET IRFY430 / IRFY430M BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 500V VGS Gate Source Voltage 20V ID Tc = 25C