IRFY430M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFY430M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 135 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm

Encapsulados: TO-257AB

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IRFY430M datasheet

 ..1. Size:828K  semelab
 irfy430m.pdf pdf_icon

IRFY430M

N-CHANNEL POWER MOSFET IRFY430 / IRFY430M BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage 500V VGS Gate Source Voltage 20V ID Tc = 25 C

 7.1. Size:169K  international rectifier
 irfy430c.pdf pdf_icon

IRFY430M

PD - 91291C IRFY430C,IRFY430CM POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430C 1.5 4.5A Ceramic IRFY430CM 1.5 4.5A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo

 7.2. Size:167K  international rectifier
 irfy430cm.pdf pdf_icon

IRFY430M

PD - 91291C IRFY430C,IRFY430CM POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430C 1.5 4.5A Ceramic IRFY430CM 1.5 4.5A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo

 7.3. Size:168K  international rectifier
 irfy430.pdf pdf_icon

IRFY430M

PD - 94191 IRFY430,IRFY430M POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430 1.5 4.5A Glass IRFY430M 1.5 4.5A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-stat

MOSTRAR MÁS

Otros transistores... IRFY320C, IRFY330, IRFY330C, IRFY340CM, IRFY340M, IRFY420, IRFY420C, IRFY430CM, CS150N03A8, IRFY440CM, IRFY440-T257, IRFY540, IRFY9130CM, IRFY9130M, IRFY9140CM, IRFY9140M, IRFY9140X