IRFY9130M Todos los transistores

 

IRFY9130M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFY9130M
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Id|ⓘ - Corriente continua de drenaje: 11.2 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO-257AB
 

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IRFY9130M datasheet

 ..1. Size:11K  semelab
 irfy9130m.pdf pdf_icon

IRFY9130M

IRFY9130M Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 11.2A RDS(ON) = 0.3 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,

 6.1. Size:828K  international rectifier
 irfy9130cm.pdf pdf_icon

IRFY9130M

PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130C 0.3 -11.2A Ceramic IRFY9130CM 0.3 -11.2A Ceramic TO-257AA HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves v

 6.2. Size:161K  international rectifier
 irfy9130c.pdf pdf_icon

IRFY9130M

PD - 91293B IRFY9130C,IRFY9130CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130C 0.3 -11.2A Ceramic IRFY9130CM 0.3 -11.2A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves

 6.3. Size:161K  international rectifier
 irfy9130.pdf pdf_icon

IRFY9130M

PD - 94195 IRFY9130,IRFY9130M POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130 0.3 -11.2A Glass IRFY9130M 0.3 -11.2A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low

MOSTRAR MÁS

Otros transistores... IRFY420 , IRFY420C , IRFY430CM , IRFY430M , IRFY440CM , IRFY440-T257 , IRFY540 , IRFY9130CM , TK10A60D , IRFY9140CM , IRFY9140M , IRFY9140X , IRFY9230 , IRFY9240CM , IRFY9240M , IRFY9310F , IRFZ10PBF .

History: AGM10N15R | AGM306C | AGM303MNA | AGM056N10C | AGM15N10D | AGM18N20H | AGM15T13A

 

 
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