All MOSFET. IRFY9130M Datasheet

 

IRFY9130M Datasheet and Replacement


   Type Designator: IRFY9130M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 11.2 A
   tr ⓘ - Rise Time: 140 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-257AB
 

 IRFY9130M substitution

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IRFY9130M Datasheet (PDF)

 ..1. Size:11K  semelab
 irfy9130m.pdf pdf_icon

IRFY9130M

IRFY9130MDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 11.2A RDS(ON) = 0.3 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,

 6.1. Size:828K  international rectifier
 irfy9130cm.pdf pdf_icon

IRFY9130M

PD-91293CIRFY9130C, IRFY9130CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130C 0.3 -11.2A CeramicIRFY9130CM 0.3 -11.2A CeramicTO-257AAHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves v

 6.2. Size:161K  international rectifier
 irfy9130c.pdf pdf_icon

IRFY9130M

PD - 91293BIRFY9130C,IRFY9130CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130C 0.3 -11.2A CeramicIRFY9130CM 0.3 -11.2A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves

 6.3. Size:161K  international rectifier
 irfy9130.pdf pdf_icon

IRFY9130M

PD - 94195IRFY9130,IRFY9130MPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130 0.3 -11.2A GlassIRFY9130M 0.3 -11.2A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low

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Datasheet: IRFY420 , IRFY420C , IRFY430CM , IRFY430M , IRFY440CM , IRFY440-T257 , IRFY540 , IRFY9130CM , 13N50 , IRFY9140CM , IRFY9140M , IRFY9140X , IRFY9230 , IRFY9240CM , IRFY9240M , IRFY9310F , IRFZ10PBF .

Keywords - IRFY9130M MOSFET datasheet

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