All MOSFET. IRFY9130M Datasheet

 

IRFY9130M MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFY9130M

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 11.2 A

Total Gate Charge (Qg): 30 nC

Rise Time (tr): 140 nS

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO-257AB

IRFY9130M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFY9130M Datasheet (PDF)

1.1. irfy9130m.pdf Size:11K _update

IRFY9130M

IRFY9130M Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 11.2A RDS(ON) = 0.3Ω Ω Ω Ω All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,

2.1. irfy9130cm.pdf Size:828K _update

IRFY9130M
IRFY9130M

PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET 100V, P-CHANNEL ® THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves v

2.2. irfy9130.pdf Size:161K _international_rectifier

IRFY9130M
IRFY9130M

PD - 94195 IRFY9130,IRFY9130M POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130 0.3 ? -11.2A Glass IRFY9130M 0.3 ? -11.2A Glass HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-state re

 2.3. irfy9130cm.pdf Size:140K _international_rectifier

IRFY9130M
IRFY9130M

Provisional Data Sheet No. PD 9.1293A IRFY9130CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.3? HEXFET Product Summary International Rectifiers HEXFET technology is the key to Part Number BVDSS RDS(on) ID its advanced line of power MOSFET transistors. The effi- cient geometry design achieves very low on-state resis- IRFY9130CM -100V 0.3? -11.2A tance combined with high transconductance.

2.4. irfy9130c.pdf Size:161K _international_rectifier

IRFY9130M
IRFY9130M

PD - 91293B IRFY9130C,IRFY9130CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130C 0.3 ? -11.2A Ceramic IRFY9130CM 0.3 ? -11.2A Ceramic HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top