IRFY9240M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFY9240M
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 85 nS
Cossⓘ - Capacitancia de salida: 570 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.51 Ohm
Paquete / Cubierta: TO-257AA
Búsqueda de reemplazo de MOSFET IRFY9240M
IRFY9240M Datasheet (PDF)
irfy9240m.pdf
PD - 94199IRFY9240,IRFY9240MPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240 0.51 -9.4A GlassIRFY9240M 0.51 -9.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very lo
irfy9240c.pdf
PD - 91295BIRFY9240C,IRFY9240CMPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240C 0.51 -9.4A CeramicIRFY9240CM 0.51 -9.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve
irfy9240cm.pdf
PD - 91295BIRFY9240C,IRFY9240CMPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240C 0.51 -9.4A CeramicIRFY9240CM 0.51 -9.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve
irfy9240.pdf
PD - 94199IRFY9240,IRFY9240MPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240 0.51 -9.4A GlassIRFY9240M 0.51 -9.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very lo
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918