IRFY9310F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFY9310F
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 1.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 10 nS
Cossⓘ - Capacitancia de salida: 50 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
Encapsulados: TO-257F
Búsqueda de reemplazo de IRFY9310F MOSFET
- Selecciónⓘ de transistores por parámetros
IRFY9310F datasheet
..1. Size:20K semelab
irfy9310f.pdf 
IRFY9310F MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET 4.50 4.81 10.40 0.75 10.80 FOR HI REL 0.95 APPLICATIONS 3.50 Dia. 3.70 VDSS 400V 1 2 3 ID(cont) 1.8A 1.0 dia. 3 places RDS(on) 7.0 FEATURES HERMETICALLY SEALED TO 220 METAL 0.75 0.85 PACKAGE WITH FLEXIBLE LEADS 2.54 2.65 BSC 2.96 SIMPLE DRIVE REQUIREMENTS LIGHTWEI
9.1. Size:11K 1
irfy9120.pdf
IRFY9120 Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 5.3A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,
9.2. Size:11K 1
irfy9120c.pdf
IRFY9120C Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 5.3A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,
9.3. Size:141K international rectifier
irfy9240m.pdf
PD - 94199 IRFY9240,IRFY9240M POWER MOSFET 200V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240 0.51 -9.4A Glass IRFY9240M 0.51 -9.4A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo
9.4. Size:279K international rectifier
irfy9140m.pdf
PD - 94197C IRFY9140, IRFY9140M POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 -15.8A Glass IRFY9140M 0.20 -15.8A Glass HEXFET MOSFET technology is the key to International TO-257AA Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very
9.5. Size:145K international rectifier
irfy9240c.pdf
PD - 91295B IRFY9240C,IRFY9240CM POWER MOSFET 200V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240C 0.51 -9.4A Ceramic IRFY9240CM 0.51 -9.4A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieve
9.6. Size:828K international rectifier
irfy9130cm.pdf
PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130C 0.3 -11.2A Ceramic IRFY9130CM 0.3 -11.2A Ceramic TO-257AA HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves v
9.7. Size:161K international rectifier
irfy9130c.pdf
PD - 91293B IRFY9130C,IRFY9130CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130C 0.3 -11.2A Ceramic IRFY9130CM 0.3 -11.2A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves
9.8. Size:161K international rectifier
irfy9130.pdf
PD - 94195 IRFY9130,IRFY9130M POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130 0.3 -11.2A Glass IRFY9130M 0.3 -11.2A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low
9.9. Size:144K international rectifier
irfy9240cm.pdf
PD - 91295B IRFY9240C,IRFY9240CM POWER MOSFET 200V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240C 0.51 -9.4A Ceramic IRFY9240CM 0.51 -9.4A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieve
9.10. Size:143K international rectifier
irfy9240.pdf
PD - 94199 IRFY9240,IRFY9240M POWER MOSFET 200V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240 0.51 -9.4A Glass IRFY9240M 0.51 -9.4A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo
9.11. Size:254K international rectifier
irfy9140cm.pdf
PD - 91294D IRFY9140C, IRFY9140CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140C 0.20 -15.8A Ceramic IRFY9140CM 0.20 -15.8A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achiev
9.12. Size:223K international rectifier
irfy9140.pdf
PD - 94197A IRFY9140,IRFY9140M IRFY9140,IRFY9140M IRFY9140,IRFY9140M IRFY9140,IRFY9140M IRFY9140,IRFY9140M POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY THRU-HOLE (TO-257AA) HEXFET MOSFET T
9.13. Size:137K international rectifier
irfy9140c.pdf
PD - 91294B IRFY9140C,IRFY9140CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140C 0.20 -15.8A Ceramic IRFY9140CM 0.20 -15.8A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieve
9.14. Size:50K semelab
irfy9230.pdf
IRFY9230 MECHANICAL DATA P CHANNEL Dimensions in mm (inches) POWER MOSFET 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) FOR HI REL 1.14 (0.045) APPLICATIONS 3.56 (0.140) Dia. 3.81 (0.150) VDSS 200V 1 2 3 ID(cont) 6.5A RDS(on) 0.80 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) 3.05 (0.120) BSC BSC FEATURES HERMETICALLY SEALED T
9.15. Size:11K semelab
irfy9140x.pdf
IRFY9140X Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 15.8A RDS(ON) = 0.2 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,
9.16. Size:11K semelab
irfy9130m.pdf
IRFY9130M Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 11.2A RDS(ON) = 0.3 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,
Otros transistores... IRFY9130CM, IRFY9130M, IRFY9140CM, IRFY9140M, IRFY9140X, IRFY9230, IRFY9240CM, IRFY9240M, 10N65, IRFZ10PBF, IRFZ14L, IRFZ14PBF, IRFZ14S, IRFZ14SPBF, IRFZ20PBF, IRFZ24L, IRFZ24NPBF
