Аналоги IRFY9310F. Основные параметры
Наименование производителя: IRFY9310F
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 50
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 1.8
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 50
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 7
Ohm
Тип корпуса: TO-257F
Аналог (замена) для IRFY9310F
-
подбор ⓘ MOSFET транзистора по параметрам
IRFY9310F даташит
..1. Size:20K semelab
irfy9310f.pdf 

IRFY9310F MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET 4.50 4.81 10.40 0.75 10.80 FOR HI REL 0.95 APPLICATIONS 3.50 Dia. 3.70 VDSS 400V 1 2 3 ID(cont) 1.8A 1.0 dia. 3 places RDS(on) 7.0 FEATURES HERMETICALLY SEALED TO 220 METAL 0.75 0.85 PACKAGE WITH FLEXIBLE LEADS 2.54 2.65 BSC 2.96 SIMPLE DRIVE REQUIREMENTS LIGHTWEI
9.1. Size:11K 1
irfy9120.pdf 

IRFY9120 Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 5.3A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,
9.2. Size:11K 1
irfy9120c.pdf 

IRFY9120C Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 5.3A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,
9.3. Size:141K international rectifier
irfy9240m.pdf 

PD - 94199 IRFY9240,IRFY9240M POWER MOSFET 200V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240 0.51 -9.4A Glass IRFY9240M 0.51 -9.4A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo
9.4. Size:279K international rectifier
irfy9140m.pdf 

PD - 94197C IRFY9140, IRFY9140M POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 -15.8A Glass IRFY9140M 0.20 -15.8A Glass HEXFET MOSFET technology is the key to International TO-257AA Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very
9.5. Size:145K international rectifier
irfy9240c.pdf 

PD - 91295B IRFY9240C,IRFY9240CM POWER MOSFET 200V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240C 0.51 -9.4A Ceramic IRFY9240CM 0.51 -9.4A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieve
9.6. Size:828K international rectifier
irfy9130cm.pdf 

PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130C 0.3 -11.2A Ceramic IRFY9130CM 0.3 -11.2A Ceramic TO-257AA HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves v
9.7. Size:161K international rectifier
irfy9130c.pdf 

PD - 91293B IRFY9130C,IRFY9130CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130C 0.3 -11.2A Ceramic IRFY9130CM 0.3 -11.2A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves
9.8. Size:161K international rectifier
irfy9130.pdf 

PD - 94195 IRFY9130,IRFY9130M POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130 0.3 -11.2A Glass IRFY9130M 0.3 -11.2A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low
9.9. Size:144K international rectifier
irfy9240cm.pdf 

PD - 91295B IRFY9240C,IRFY9240CM POWER MOSFET 200V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240C 0.51 -9.4A Ceramic IRFY9240CM 0.51 -9.4A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieve
9.10. Size:143K international rectifier
irfy9240.pdf 

PD - 94199 IRFY9240,IRFY9240M POWER MOSFET 200V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240 0.51 -9.4A Glass IRFY9240M 0.51 -9.4A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo
9.11. Size:254K international rectifier
irfy9140cm.pdf 

PD - 91294D IRFY9140C, IRFY9140CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140C 0.20 -15.8A Ceramic IRFY9140CM 0.20 -15.8A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achiev
9.12. Size:223K international rectifier
irfy9140.pdf 

PD - 94197A IRFY9140,IRFY9140M IRFY9140,IRFY9140M IRFY9140,IRFY9140M IRFY9140,IRFY9140M IRFY9140,IRFY9140M POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY THRU-HOLE (TO-257AA) HEXFET MOSFET T
9.13. Size:137K international rectifier
irfy9140c.pdf 

PD - 91294B IRFY9140C,IRFY9140CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140C 0.20 -15.8A Ceramic IRFY9140CM 0.20 -15.8A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieve
9.14. Size:50K semelab
irfy9230.pdf 

IRFY9230 MECHANICAL DATA P CHANNEL Dimensions in mm (inches) POWER MOSFET 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) FOR HI REL 1.14 (0.045) APPLICATIONS 3.56 (0.140) Dia. 3.81 (0.150) VDSS 200V 1 2 3 ID(cont) 6.5A RDS(on) 0.80 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) 3.05 (0.120) BSC BSC FEATURES HERMETICALLY SEALED T
9.15. Size:11K semelab
irfy9140x.pdf 

IRFY9140X Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 15.8A RDS(ON) = 0.2 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,
9.16. Size:11K semelab
irfy9130m.pdf 

IRFY9130M Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 11.2A RDS(ON) = 0.3 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,
Другие MOSFET... IRFY9130CM
, IRFY9130M
, IRFY9140CM
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, IRFY9230
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