IRFY9310F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFY9310F
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 13 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 50 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7 Ohm
Тип корпуса: TO-257F
IRFY9310F Datasheet (PDF)
irfy9310f.pdf
IRFY9310FMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET4.504.8110.400.7510.80FOR HIREL0.95APPLICATIONS3.50Dia.3.70VDSS 400V1 2 3ID(cont) 1.8A1.0 dia.3 placesRDS(on) 7.0FEATURES HERMETICALLY SEALED TO220 METAL0.750.85PACKAGE WITH FLEXIBLE LEADS2.54 2.65BSC 2.96 SIMPLE DRIVE REQUIREMENTS LIGHTWEI
irfy9120.pdf
IRFY9120Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 5.3A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
irfy9120c.pdf
IRFY9120CDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 5.3A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
irfy9240m.pdf
PD - 94199IRFY9240,IRFY9240MPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240 0.51 -9.4A GlassIRFY9240M 0.51 -9.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very lo
irfy9140m.pdf
PD - 94197CIRFY9140, IRFY9140MPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140 0.20 -15.8A GlassIRFY9140M 0.20 -15.8A GlassHEXFET MOSFET technology is the key to InternationalTO-257AARectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very
irfy9240c.pdf
PD - 91295BIRFY9240C,IRFY9240CMPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240C 0.51 -9.4A CeramicIRFY9240CM 0.51 -9.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve
irfy9130cm.pdf
PD-91293CIRFY9130C, IRFY9130CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130C 0.3 -11.2A CeramicIRFY9130CM 0.3 -11.2A CeramicTO-257AAHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves v
irfy9130c.pdf
PD - 91293BIRFY9130C,IRFY9130CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130C 0.3 -11.2A CeramicIRFY9130CM 0.3 -11.2A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves
irfy9130.pdf
PD - 94195IRFY9130,IRFY9130MPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130 0.3 -11.2A GlassIRFY9130M 0.3 -11.2A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low
irfy9240cm.pdf
PD - 91295BIRFY9240C,IRFY9240CMPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240C 0.51 -9.4A CeramicIRFY9240CM 0.51 -9.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve
irfy9240.pdf
PD - 94199IRFY9240,IRFY9240MPOWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number Rds(on) Id EyeletsIRFY9240 0.51 -9.4A GlassIRFY9240M 0.51 -9.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very lo
irfy9140cm.pdf
PD - 91294DIRFY9140C, IRFY9140CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140C 0.20 -15.8A CeramicIRFY9140CM 0.20 -15.8A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achiev
irfy9140.pdf
PD - 94197AIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYTHRU-HOLE (TO-257AA) HEXFET MOSFET T
irfy9140c.pdf
PD - 91294BIRFY9140C,IRFY9140CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140C 0.20 -15.8A CeramicIRFY9140CM 0.20 -15.8A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve
irfy9230.pdf
IRFY9230MECHANICAL DATAPCHANNELDimensions in mm (inches)POWER MOSFET4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)FOR HIREL1.14 (0.045)APPLICATIONS3.56 (0.140)Dia.3.81 (0.150)VDSS 200V1 2 3ID(cont) 6.5ARDS(on) 0.800.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120)BSC BSCFEATURES HERMETICALLY SEALED T
irfy9140x.pdf
IRFY9140XDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 15.8A RDS(ON) = 0.2 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
irfy9130m.pdf
IRFY9130MDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 11.2A RDS(ON) = 0.3 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918