IRFZ14SPBF Todos los transistores

 

IRFZ14SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFZ14SPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 43 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO-263
 

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IRFZ14SPBF Datasheet (PDF)

 ..1. Size:324K  vishay
 irfz14l irfz14s irfz14spbf sihfz14l sihfz14s.pdf pdf_icon

IRFZ14SPBF

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw

 7.1. Size:234K  international rectifier
 irfz14s.pdf pdf_icon

IRFZ14SPBF

PD - 9.890AIRFZ14S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175C Operating Temperature RDS(on) = 0.20 Fast SwitchingGID = 10ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

 7.2. Size:185K  international rectifier
 irfz14s-l.pdf pdf_icon

IRFZ14SPBF

PD - 9.890AIRFZ14S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175C Operating Temperature RDS(on) = 0.20 Fast SwitchingGID = 10ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

 7.3. Size:333K  vishay
 irfz14s irfz14l sihfz14s sihfz14l.pdf pdf_icon

IRFZ14SPBF

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw

MOSTRAR MÁS

Otros transistores... IRFY9230 , IRFY9240CM , IRFY9240M , IRFY9310F , IRFZ10PBF , IRFZ14L , IRFZ14PBF , IRFZ14S , 75N75 , IRFZ20PBF , IRFZ24L , IRFZ24NPBF , IRFZ24NSPBF , IRFZ24PBF , IRFZ24S , IRFZ24SPBF , IRFZ30PBF .

History: RFK35N10 | P8008BV | 2N60L-TMS4-T | IPA90R1K2C3 | BVSS123L | AM2319P-T1 | DHS020N88E

 

 
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