IRFZ14SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ14SPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 43 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de IRFZ14SPBF MOSFET
IRFZ14SPBF Datasheet (PDF)
irfz14l irfz14s irfz14spbf sihfz14l sihfz14s.pdf

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw
irfz14s.pdf

PD - 9.890AIRFZ14S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175C Operating Temperature RDS(on) = 0.20 Fast SwitchingGID = 10ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
irfz14s-l.pdf

PD - 9.890AIRFZ14S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175C Operating Temperature RDS(on) = 0.20 Fast SwitchingGID = 10ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
irfz14s irfz14l sihfz14s sihfz14l.pdf

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw
Otros transistores... IRFY9230 , IRFY9240CM , IRFY9240M , IRFY9310F , IRFZ10PBF , IRFZ14L , IRFZ14PBF , IRFZ14S , RU6888R , IRFZ20PBF , IRFZ24L , IRFZ24NPBF , IRFZ24NSPBF , IRFZ24PBF , IRFZ24S , IRFZ24SPBF , IRFZ30PBF .
History: SIRA72DP | NCE1512IA | LND06R062 | MTP3N100 | CM6N40C | STD5NM60T4
History: SIRA72DP | NCE1512IA | LND06R062 | MTP3N100 | CM6N40C | STD5NM60T4



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