IRFZ14SPBF - описание и поиск аналогов

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S) Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating Temperature Qgs (nC) 3.1 Fast Sw

PD - 9.890A IRFZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

PD - 9.890A IRFZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S) Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating Temperature Qgs (nC) 3.1 Fast Sw

IRFZ14S, SiHFZ14S, SiHFZ14L www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Advanced process technology Surface-mount (IRFZ14S, SiHFZ14S) I2PAK (TO-262) D2PAK (TO-263) Low profile through-hole (SiHFZ14L) Available 175 C operating temperature Fast switching Available G Material categorization for definitions of compliance please see www.vishay.c