IRFZ34NSPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ34NSPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 68 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 29 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 49 nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de IRFZ34NSPBF MOSFET
Principales características: IRFZ34NSPBF
irfz34nspbf irfz34nlpbf.pdf
PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.040 l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech
irfz34nlpbf irfz34nspbf.pdf
PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.040 l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech
irfz34ns.pdf
PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175 C Operating Temperature RDS(on) = 0.040 Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo
irfz34nstr.pdf
IRFZ34NSTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di
Otros transistores... IRFZ24PBF , IRFZ24S , IRFZ24SPBF , IRFZ30PBF , IRFZ34EPBF , IRFZ34L , IRFZ34NLPBF , IRFZ34NPBF , IRF1405 , IRFZ34PBF , IRFZ34S , IRFZ40PBF , IRFZ44EPBF , IRFZ44ESPBF , IRFZ44L , IRFZ44NLPBF , IRFZ44NPBF .
History: CEU2303
History: CEU2303
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