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IRFZ44ESPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFZ44ESPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 110 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 48 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 60 nC
   Tiempo de subida (tr): 60 nS
   Conductancia de drenaje-sustrato (Cd): 420 pF
   Resistencia entre drenaje y fuente RDS(on): 0.023 Ohm
   Paquete / Cubierta: TO-263

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IRFZ44ESPBF Datasheet (PDF)

 ..1. Size:234K  international rectifier
irfz44espbf.pdf

IRFZ44ESPBF
IRFZ44ESPBF

PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec

 ..2. Size:234K  infineon
irfz44espbf irfz44elpbf.pdf

IRFZ44ESPBF
IRFZ44ESPBF

PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec

 6.1. Size:163K  international rectifier
irfz44es irfz44el.pdf

IRFZ44ESPBF
IRFZ44ESPBF

PD - 9.1714IRFZ44ES/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating TemperatureRDS(on) = 0.023G Fast Switching Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve

 6.2. Size:1792K  cn vbsemi
irfz44es.pdf

IRFZ44ESPBF
IRFZ44ESPBF

IRFZ44ESwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

 6.3. Size:205K  inchange semiconductor
irfz44es.pdf

IRFZ44ESPBF
IRFZ44ESPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ESFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

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