IRFZ44NSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFZ44NSPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 63 nC
   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0175 Ohm
   Paquete / Cubierta: TO-263

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IRFZ44NSPBF Datasheet (PDF)

..1. Size:334K international rectifier
irfz44nlpbf irfz44nspbf.pdf

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

..2. Size:334K infineon
irfz44nspbf irfz44nlpbf.pdf

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

6.1. Size:151K international rectifier
irfz44ns irfz44nl.pdf

PD - 94153IRFZ44NSIRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0175DescriptionGAdvanced HEXFET Power MOSFETs from InternationalID = 49ARectifier utilize advanced processing techniques to achievee

6.2. Size:273K international rectifier
auirfz44nl auirfz44ns.pdf

PD-96391AAUTOMOTIVE GRADEAUIRFZ44NSAUIRFZ44NLHEXFET Power MOSFETFeaturesD Advanced Planar TechnologyV(BR)DSS55V Low On-Resistance Dynamic dV/dT RatingRDS(on) max.17.5m 175C Operating Temperature G Fast SwitchingS ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDDescription

6.3. Size:57K international rectifier
irfz44ns 1.pdf

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

6.4. Size:57K philips
irfz44ns 1.pdf

6.5. Size:1459K cn vbsemi
irfz44ns.pdf

IRFZ44NSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

6.6. Size:257K inchange semiconductor
irfz44ns.pdf

isc N-Channel MOSFET Transistor IRFZ44NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP04N60H-H-HF | VBM2625 | CRST065N08N

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