IRFZ44NSPBF Datasheet. Equivalente

 ..1. Size:334K  international rectifier
 irfz44nlpbf irfz44nspbf.pdf

IRFZ44NSPbF l IRFZ44NLPbF l l l D DSS l l l DS(on) Description G D

 ..2. Size:334K  international rectifier
 irfz44nspbf irfz44nlpbf.pdf

IRFZ44NSPbF l IRFZ44NLPbF l l l D DSS l l l DS(on) Description G D

 6.1. Size:151K  international rectifier
 irfz44ns irfz44nl.pdf

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL) D 175 C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175 Description G Advanced HEXFET Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve e

 6.2. Size:273K  international rectifier
 auirfz44nl auirfz44ns.pdf

PD-96391A AUTOMOTIVE GRADE AUIRFZ44NS AUIRFZ44NL HEXFET Power MOSFET Features D Advanced Planar Technology V(BR)DSS 55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 17.5m 175 C Operating Temperature G Fast Switching S ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description

 6.3. Size:57K  international rectifier
 irfz44ns 1.pdf

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device feat

 6.4. Size:57K  philips
 irfz44ns 1.pdf

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device feat

 6.5. Size:1459K  cn vbsemi
 irfz44ns.pdf

IRFZ44NS www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Source

 6.6. Size:1016K  cn minos
 irfz44ns.pdf

60V N-Channel Power MOSFET DESCRIPTION The IRFZ44NS uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply KEY CHARACTERISTICS V = 60V,I = 60A DS D R

 6.7. Size:257K  inchange semiconductor
 irfz44ns.pdf

isc N-Channel MOSFET Transistor IRFZ44NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S