Справочник MOSFET. IRFZ44NSPBF

 

IRFZ44NSPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFZ44NSPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 94 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 49 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 360 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0175 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для IRFZ44NSPBF

 

 

IRFZ44NSPBF Datasheet (PDF)

 ..1. Size:334K  international rectifier
 irfz44nlpbf irfz44nspbf.pdf

IRFZ44NSPBF IRFZ44NSPBF

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

 ..2. Size:334K  infineon
 irfz44nspbf irfz44nlpbf.pdf

IRFZ44NSPBF IRFZ44NSPBF

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

 6.1. Size:151K  international rectifier
 irfz44ns irfz44nl.pdf

IRFZ44NSPBF IRFZ44NSPBF

PD - 94153IRFZ44NSIRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0175DescriptionGAdvanced HEXFET Power MOSFETs from InternationalID = 49ARectifier utilize advanced processing techniques to achievee

 6.2. Size:273K  international rectifier
 auirfz44nl auirfz44ns.pdf

IRFZ44NSPBF IRFZ44NSPBF

PD-96391AAUTOMOTIVE GRADEAUIRFZ44NSAUIRFZ44NLHEXFET Power MOSFETFeaturesD Advanced Planar TechnologyV(BR)DSS55V Low On-Resistance Dynamic dV/dT RatingRDS(on) max.17.5m 175C Operating Temperature G Fast SwitchingS ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDDescription

 6.3. Size:57K  international rectifier
 irfz44ns 1.pdf

IRFZ44NSPBF IRFZ44NSPBF

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

 6.4. Size:57K  philips
 irfz44ns 1.pdf

IRFZ44NSPBF IRFZ44NSPBF

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

 6.5. Size:1459K  cn vbsemi
 irfz44ns.pdf

IRFZ44NSPBF IRFZ44NSPBF

IRFZ44NSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

 6.6. Size:257K  inchange semiconductor
 irfz44ns.pdf

IRFZ44NSPBF IRFZ44NSPBF

isc N-Channel MOSFET Transistor IRFZ44NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

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