IRFZ46NLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ46NLPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 107 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 53 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 76 nS
Cossⓘ - Capacitancia de salida: 407 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
Paquete / Cubierta: TO-262 TO-262AA
Búsqueda de reemplazo de IRFZ46NLPBF MOSFET
IRFZ46NLPBF Datasheet (PDF)
irfz46nlpbf.pdf

PD - 95158IRFZ46NSPbFIRFZ46NLPbF Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0165 Lead-FreeGDescriptionID = 53A Advanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing t
auirfz46nl.pdf

PD - 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi
irfz46ns irfz46nl.pdf

PD - 9.1305BIRFZ46NSIRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS)D Low-profile through-hole (IRFZ46NL)VDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.0165 Fully Avalanche RatedGDescriptionID = 53AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techniques to achie
irfz46n.pdf

PD-91277IRFZ46NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mG Fast Switching Fully Avalanche RatedID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance
Otros transistores... IRFZ44VZL , IRFZ44VZPBF , IRFZ44VZSPBF , IRFZ44ZLPBF , IRFZ44ZPBF , IRFZ44ZSPBF , IRFZ46 , IRFZ46L , IRF540 , IRFZ46NPBF , IRFZ46ZLPBF , IRFZ46ZPBF , IRFZ46ZSPBF , IRFZ48 , IRFZ48L , IRFZ48NLPBF , IRFZ48NPBF .
History: HFP3N80 | BSC100N03LSG | HSS2307A | TWE3139K | NTTFS5C673NL | NVGS5120P
History: HFP3N80 | BSC100N03LSG | HSS2307A | TWE3139K | NTTFS5C673NL | NVGS5120P



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