IRFZ46NLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ46NLPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 107 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 53 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 72 nC
Tiempo de elevación (tr): 76 nS
Conductancia de drenaje-sustrato (Cd): 407 pF
Resistencia drenaje-fuente RDS(on): 0.0165 Ohm
Empaquetado / Estuche: TO-262_TO-262AA
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IRFZ46NLPBF Datasheet (PDF)
1.1. irfz46nlpbf.pdf 
Size:679K _update
PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165Ω Lead-Free G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing t
3.1. irfz46npbf.pdf Size:215K _update
PD - 94952A IRFZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ G l Fully Avalanche Rated l Lead-Free ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
3.2. irfz46n.pdf Size:85K _international_rectifier
PD-91277 IRFZ46N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 16.5m? G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil
3.3. irfz46ns.pdf Size:149K _international_rectifier
PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 0.0165? Fully Avalanche Rated G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to achieve extr
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