IRFZ46NLPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFZ46NLPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 107
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 53
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 72
nC
trⓘ - Rise Time: 76
nS
Cossⓘ -
Output Capacitance: 407
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0165
Ohm
Package:
TO-262
TO-262AA
IRFZ46NLPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFZ46NLPBF
Datasheet (PDF)
..1. Size:679K international rectifier
irfz46nlpbf.pdf 
PD - 95158IRFZ46NSPbFIRFZ46NLPbF Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0165 Lead-FreeGDescriptionID = 53A Advanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing t
6.1. Size:245K international rectifier
auirfz46nl.pdf
PD - 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi
6.2. Size:149K international rectifier
irfz46ns irfz46nl.pdf
PD - 9.1305BIRFZ46NSIRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS)D Low-profile through-hole (IRFZ46NL)VDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.0165 Fully Avalanche RatedGDescriptionID = 53AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techniques to achie
7.1. Size:85K international rectifier
irfz46n.pdf
PD-91277IRFZ46NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mG Fast Switching Fully Avalanche RatedID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance
7.2. Size:215K international rectifier
irfz46npbf.pdf
PD - 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
7.3. Size:245K international rectifier
auirfz46ns.pdf
PD - 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi
7.4. Size:215K infineon
irfz46npbf.pdf
PD - 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
7.5. Size:856K cn vbsemi
irfz46ns.pdf
IRFZ46NSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source
7.6. Size:246K inchange semiconductor
irfz46n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ46N IIRFZ46NFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
7.7. Size:258K inchange semiconductor
irfz46ns.pdf
isc N-Channel MOSFET Transistor IRFZ46NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
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