IRFZ46NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFZ46NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 107 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 53 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 72 nC
   trⓘ - Tiempo de subida: 76 nS
   Cossⓘ - Capacitancia de salida: 407 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
   Paquete / Cubierta: TO-220AB

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IRFZ46NPBF Datasheet (PDF)

..1. Size:215K international rectifier
irfz46npbf.pdf

PD - 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

..2. Size:215K infineon
irfz46npbf.pdf

7.1. Size:245K international rectifier
auirfz46nl.pdf

PD - 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi

7.2. Size:149K international rectifier
irfz46ns irfz46nl.pdf

PD - 9.1305BIRFZ46NSIRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS)D Low-profile through-hole (IRFZ46NL)VDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.0165 Fully Avalanche RatedGDescriptionID = 53AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techniques to achie

7.3. Size:85K international rectifier
irfz46n.pdf

PD-91277IRFZ46NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mG Fast Switching Fully Avalanche RatedID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance

7.4. Size:679K international rectifier
irfz46nlpbf.pdf

PD - 95158IRFZ46NSPbFIRFZ46NLPbF Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0165 Lead-FreeGDescriptionID = 53A Advanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing t

7.5. Size:245K international rectifier
auirfz46ns.pdf

7.6. Size:856K cn vbsemi
irfz46ns.pdf

IRFZ46NSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

7.7. Size:246K inchange semiconductor
irfz46n.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ46N IIRFZ46NFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

7.8. Size:258K inchange semiconductor
irfz46ns.pdf

isc N-Channel MOSFET Transistor IRFZ46NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

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