All MOSFET. IRFZ46NPBF Datasheet

 

IRFZ46NPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ46NPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 107 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 53 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 72 nC

Rise Time (tr): 76 nS

Drain-Source Capacitance (Cd): 407 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0165 Ohm

Package: TO-220AB

IRFZ46NPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ46NPBF Datasheet (PDF)

1.1. irfz46npbf.pdf Size:215K _update

IRFZ46NPBF
IRFZ46NPBF

PD - 94952A IRFZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ G l Fully Avalanche Rated l Lead-Free ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

3.1. irfz46nlpbf.pdf Size:679K _update

IRFZ46NPBF
IRFZ46NPBF

PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165Ω Lead-Free G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing t

3.2. irfz46n.pdf Size:85K _international_rectifier

IRFZ46NPBF
IRFZ46NPBF

PD-91277 IRFZ46N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 16.5m? G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

 3.3. irfz46ns.pdf Size:149K _international_rectifier

IRFZ46NPBF
IRFZ46NPBF

PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 0.0165? Fully Avalanche Rated G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to achieve extr

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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