IRFZ48RSPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ48RSPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 190 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 250 nS
Cossⓘ - Capacitancia de salida: 1300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET IRFZ48RSPBF
Principales características: IRFZ48RSPBF
irfz48rspbf irfz48rlpbf.pdf
PD - 95761 IRFZ48RSPbF IRFZ48RLPbF l Advanced Process Technology HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.018 l Drop in Replacement of the IRFZ48 G for Linear/Audio Applications ID = 50*A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier
irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Si
irfz48rsp.pdf
IRFZ48RSP www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Sourc
irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Si
Otros transistores... IRFZ48NLPBF , IRFZ48NPBF , IRFZ48PBF , IRFZ48R , IRFZ48RL , IRFZ48RLPBF , IRFZ48RPBF , IRFZ48RS , AON6414A , IRFZ48S , IRFZ48VSPBF , IRFZ48ZLPBF , IRFZ48ZPBF , IRFZ48ZSPBF , IRHF57214SE , IRHF57230 , IRHF57234SE .
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