IRFZ48RSPBF - описание и поиск аналогов

PD - 95761 IRFZ48RSPbF IRFZ48RLPbF l Advanced Process Technology HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.018 l Drop in Replacement of the IRFZ48 G for Linear/Audio Applications ID = 50*A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Si

IRFZ48RSP www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Sourc

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Si

PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.018 G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ48 S for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize a

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 175 C Operating Temperature Fast Switching Qgs (nC) 29 Fully Avalanche Rated Qgd (nC) 36 Drop in Replacement of the SiH

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 175 C Operating Temperature Fast Switching Qgs (nC) 29 Fully Avalanche Rated Qgd (nC) 36 Drop in Replacement of the SiH