IRFZ48VSPBF Todos los transistores

 

IRFZ48VSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ48VSPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 72 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 110 nC

Tiempo de elevación (tr): 200 nS

Conductancia de drenaje-sustrato (Cd): 496 pF

Resistencia drenaje-fuente RDS(on): 0.012 Ohm

Empaquetado / Estuche: TO-263

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IRFZ48VSPBF Datasheet (PDF)

1.1. irfz48vspbf.pdf Size:179K _update

IRFZ48VSPBF
IRFZ48VSPBF

PD - 95573 IRFZ48VSPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 12mΩ G l Fully Avalanche Rated l Optimized for SMPS Applications ID = 72A S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced proc

2.1. irfz48vs.pdf Size:282K _international_rectifier

IRFZ48VSPBF
IRFZ48VSPBF

PD - 94051A IRFZ48VS HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

 3.1. irfz48v.pdf Size:111K _international_rectifier

IRFZ48VSPBF
IRFZ48VSPBF

PD - 93959A IRFZ48V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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