IRFZ48VSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFZ48VSPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 72 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 200 nS
   Cossⓘ - Capacitancia de salida: 496 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET IRFZ48VSPBF

IRFZ48VSPBF Datasheet (PDF)

..1. Size:179K international rectifier
irfz48vspbf.pdf

PD - 95573IRFZ48VSPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 60Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 12mGl Fully Avalanche Ratedl Optimized for SMPS ApplicationsID = 72ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced proc

6.1. Size:282K international rectifier
irfz48vs.pdf

PD - 94051AIRFZ48VSHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to a

6.2. Size:213K inchange semiconductor
irfz48vs.pdf

isc N-Channel MOSFET Transistor IRFZ48VSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

7.1. Size:111K international rectifier
irfz48v.pdf

PD - 93959AIRFZ48VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac

7.2. Size:223K infineon
irfz48vpbf.pdf

PD - 94992AIRFZ48VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 12ml Fully Avalanche RatedGl Optimized for SMPS ApplicationsID = 72Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro

7.3. Size:861K cn vbsemi
irfz48vpbf.pdf

IRFZ48VPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

7.4. Size:246K inchange semiconductor
irfz48v.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ48V IIRFZ48VFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CEP3100

Liste

Recientemente añadidas las descripciónes de los transistores: