IRFZ48VSPBF Datasheet and Replacement

PD - 95573IRFZ48VSPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 60Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 12mGl Fully Avalanche Ratedl Optimized for SMPS ApplicationsID = 72ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced proc

PD - 94051AIRFZ48VSHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to a

isc N-Channel MOSFET Transistor IRFZ48VSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

PD - 94992AIRFZ48VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 12ml Fully Avalanche RatedGl Optimized for SMPS ApplicationsID = 72Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro

PD - 93959AIRFZ48VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac

IRFZ48VPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ48V IIRFZ48VFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R