IRHF57214SE Todos los transistores

 

IRHF57214SE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRHF57214SE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.5 nS
   Cossⓘ - Capacitancia de salida: 53 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.55 Ohm
   Paquete / Cubierta: TO-39
     - Selección de transistores por parámetros

 

IRHF57214SE Datasheet (PDF)

 ..1. Size:216K  international rectifier
 irhf57214se.pdf pdf_icon

IRHF57214SE

PD-97063ARADIATION HARDENED IRHF57214SEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF57214SE 100K Rads (Si) 1.55 2.2ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:for Single

 7.1. Size:187K  international rectifier
 irhf57234se.pdf pdf_icon

IRHF57214SE

PD-93831BRADIATION HARDENED IRHF57234SEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF57234SE 100K Rads (Si) 0.42 5.2ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:for Single

 7.2. Size:127K  international rectifier
 irhf57230se.pdf pdf_icon

IRHF57214SE

PD - 93857ARADIATION HARDENED IRHF57230SEPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230SE 100K Rads (Si) 0.24 7.0ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized for Si

 7.3. Size:129K  international rectifier
 irhf57230.pdf pdf_icon

IRHF57214SE

PD - 93788ARADIATION HARDENED IRHF57230POWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230 100K Rads (Si) 0.22 7.3A IRHF53230 300K Rads (Si) 0.22 7.3A IRHF54230 600K Rads (Si) 0.22 7.3A IRHF58230 1000K Rads (Si) 0.275 7.3ATO-39International Rectifiers R5TM technology provides

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MGSF1N02ELT1 | UT4812 | AP03N70P-H | TDM3424 | 2SK3541MGP | TPC8045-H | SI12N60-F

 

 
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