IRHF597110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 94176CRADIATION HARDENED IRHF597110POWER MOSFET100V, P-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44 #cProduct Summary Part Number Radiation Level RDS(on) ID IRHF597110 100K Rads (Si) 1.0 -2.6A IRHF593110 300K Rads (Si) 1.0 -2.6ATO-39International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for space appli- Single Event Eff

PD-96963RADIATION HARDENED IRHF597130POWER MOSFET100V, P-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF597130 100K Rads (Si) 0.24 -6.7A IRHF593130 300K Rads (Si) 0.24 -6.7A TO-39International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for space appli-n Single Event

PD - 94450RADIATION HARDENED IRHF597230POWER MOSFET200V, P-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF597230 100K Rads (Si) 0.54 -4.5A IRHF593230 300K Rads (Si) 0.54 -4.5AT0-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-cations. These devices have

PD - 94334ARADIATION HARDENED IRHF57133SEPOWER MOSFET130V, N-CHANNELTHRU-HOLE (TO-39)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57133SE 100K Rads (Si) 0.1 10.5ATO-39International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for space appli- Single Event Effect (SEE) Hardenedcations. These dev

PD-97063ARADIATION HARDENED IRHF57214SEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF57214SE 100K Rads (Si) 1.55 2.2ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:for Single

PD - 93793ARADIATION HARDENED IRHF57Z30POWER MOSFET30V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57Z30 100K Rads (Si) 0.045 12A* IRHF53Z30 300K Rads (Si) 0.045 12A* IRHF54Z30 600K Rads (Si) 0.045 12A* IRHF58Z30 1000K Rads (Si) 0.056 12A*TO-39International Rectifiers R5TM technology provid

PD - 93791RADIATION HARDENED IRHF57034POWER MOSFET60V, N-CHANNELTHRU-HOLE (TO-39)TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57034 100K Rads (Si) 0.048 12*A IRHF53034 300K Rads (Si) 0.048 12*A IRHF54034 600K Rads (Si) 0.048 12*A IRHF58034 1000K Rads (Si) 0.060 12*ATO-39International Rectifiers R5TM technology provides

PD - 93789ARADIATION HARDENED IRHF57130POWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57130 100K Rads (Si) 0.08 11.7A IRHF53130 300K Rads (Si) 0.08 11.7A IRHF54130 600K Rads (Si) 0.08 11.7A IRHF58130 1000K Rads (Si) 0.10 11.7ATO-39International Rectifiers R5TM technology provides

PD-93831BRADIATION HARDENED IRHF57234SEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHF57234SE 100K Rads (Si) 0.42 5.2ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:for Single

PD - 93857ARADIATION HARDENED IRHF57230SEPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230SE 100K Rads (Si) 0.24 7.0ATO-39International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized for Si

PD - 93788ARADIATION HARDENED IRHF57230POWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-39) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHF57230 100K Rads (Si) 0.22 7.3A IRHF53230 300K Rads (Si) 0.22 7.3A IRHF54230 600K Rads (Si) 0.22 7.3A IRHF58230 1000K Rads (Si) 0.275 7.3ATO-39International Rectifiers R5TM technology provides