IRHF597110 - описание и поиск аналогов

PD - 94176C RADIATION HARDENED IRHF597110 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4 # c Product Summary Part Number Radiation Level RDS(on) ID IRHF597110 100K Rads (Si) 1.0 -2.6A IRHF593110 300K Rads (Si) 1.0 -2.6A TO-39 International Rectifier s R5TM technology provides Features high performance power MOSFETs for space appli- Single Event Eff

PD-96963 RADIATION HARDENED IRHF597130 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHF597130 100K Rads (Si) 0.24 -6.7A IRHF593130 300K Rads (Si) 0.24 -6.7A TO-39 International Rectifier s R5TM technology provides Features high performance power MOSFETs for space appli- n Single Event

PD - 94450 RADIATION HARDENED IRHF597230 POWER MOSFET 200V, P-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF597230 100K Rads (Si) 0.54 -4.5A IRHF593230 300K Rads (Si) 0.54 -4.5A T0-39 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- cations. These devices have

PD - 94334A RADIATION HARDENED IRHF57133SE POWER MOSFET 130V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57133SE 100K Rads (Si) 0.1 10.5A TO-39 International Rectifier s R5TM technology provides Features high performance power MOSFETs for space appli- Single Event Effect (SEE) Hardened cations. These dev

PD-97063A RADIATION HARDENED IRHF57214SE POWER MOSFET 250V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHF57214SE 100K Rads (Si) 1.55 2.2A TO-39 International Rectifier s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized Features for Single

PD - 93793A RADIATION HARDENED IRHF57Z30 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57Z30 100K Rads (Si) 0.045 12A* IRHF53Z30 300K Rads (Si) 0.045 12A* IRHF54Z30 600K Rads (Si) 0.045 12A* IRHF58Z30 1000K Rads (Si) 0.056 12A* TO-39 International Rectifier s R5TM technology provid

PD - 93791 RADIATION HARDENED IRHF57034 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57034 100K Rads (Si) 0.048 12*A IRHF53034 300K Rads (Si) 0.048 12*A IRHF54034 600K Rads (Si) 0.048 12*A IRHF58034 1000K Rads (Si) 0.060 12*A TO-39 International Rectifier s R5TM technology provides

PD - 93789A RADIATION HARDENED IRHF57130 POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57130 100K Rads (Si) 0.08 11.7A IRHF53130 300K Rads (Si) 0.08 11.7A IRHF54130 600K Rads (Si) 0.08 11.7A IRHF58130 1000K Rads (Si) 0.10 11.7A TO-39 International Rectifier s R5TM technology provides

PD-93831B RADIATION HARDENED IRHF57234SE POWER MOSFET 250V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHF57234SE 100K Rads (Si) 0.42 5.2A TO-39 International Rectifier s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized Features for Single

PD - 93857A RADIATION HARDENED IRHF57230SE POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57230SE 100K Rads (Si) 0.24 7.0A TO-39 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized for Si

PD - 93788A RADIATION HARDENED IRHF57230 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-39) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHF57230 100K Rads (Si) 0.22 7.3A IRHF53230 300K Rads (Si) 0.22 7.3A IRHF54230 600K Rads (Si) 0.22 7.3A IRHF58230 1000K Rads (Si) 0.275 7.3A TO-39 International Rectifier s R5TM technology provides