STF6N65M2 Todos los transistores

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 stf6n65m2 stp6n65m2 stu6n65m2.pdf

STF6N65M2, STP6N65M2, STU6N65M2 N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max ID STF6N65M2 3 3 STP6N65M2 650 V 1.35 4 A 2 2 1 1 STU6N65M2 TO-220FP TO-220 TAB Extremely low gate charge Excellent output capacitance (COSS) profile 3 2 1

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 stf6n65k3 stfi6n65k3 stu6n65k3.pdf

STF6N65K3, STFI6N65K3, STU6N65K3 N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK Datasheet production data Features Order codes VDSS RDS(on) max. ID Ptot STF6N65K3 TAB 30 W STFI6N65K3 650 V

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 stf6n60m2 stp6n60m2 stu6n60m2.pdf

STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) 3 2 Order codes ID 1 TJmax max IPAK 3 STF6N60M2 2 1 STP6N60M2 650 V 1.2 4.5 A TO-220FP TAB STU6N60M2 Extremely low gate charge 3 Lower RDS(on) x area vs previous

 8.2. Size:1046K  st
 stf6n62k3 stfi6n62k3 sti6n62k3 stp6n62k3 stu6n62k3.pdf

STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, I PAK, TO-220, IPAK packages Datasheet - production data Features TAB Order codes VDSS RDS(on) max. ID PTOT 3 3 STF6N62K3 30 W 2 2 1 1 STFI6N62K3 30 W TO-220FP I PAK STI6N62K3 620 V

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 std6n62k3 stf6n62k3 stp6n62k3 stu6n62k3.pdf

STD6N62K3 - STF6N62K3 STP6N62K3 - STU6N62K3 N-channel 620 V, 1.1 , 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3 Power MOSFET Features 3 RDS(on) 3 Type VDSS ID Pw 2 1 max 1 DPAK STD6N62K3 620 V

 8.4. Size:1146K  st
 sti6n62k3 stp6n62k3 stu6n62k3 stf6n62k3 std6n62k3.pdf

STD6N62K3, STF6N62K3 STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 , 5.5 A SuperMESH3 Power MOSFET in IPAK, DPAK, TO-220,TO-220FP, I PAK Features RDS(on) 3 Order codes VDSS ID Pw 2 max. 1 3 2 1 IPAK STD6N62K3 90 W I PAK STF6N62K3 30 W 3 STI6N62K3 620 V

 8.5. Size:824K  cn vbsemi
 stf6n60m2.pdf

STF6N60M2 www.VBsemi.tw N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 1.1 Reduced switching and conduction losses Qg max. (nC) 25 Ultra low gate charge (Qg) Qgs (nC) 2.0 Avalanche energy rated (UIS) Qgd (nC) 2.7 Configuratio