All MOSFET. STF6N65M2 Datasheet

 

STF6N65M2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STF6N65M2
   Marking Code: 6N65M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.8 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 12.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO-220FP

 STF6N65M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STF6N65M2 Datasheet (PDF)

 ..1. Size:732K  st
stf6n65m2 stp6n65m2 stu6n65m2.pdf

STF6N65M2
STF6N65M2

STF6N65M2, STP6N65M2, STU6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTF6N65M23 3STP6N65M2 650 V 1.35 4 A2211STU6N65M2TO-220FP TO-220TAB Extremely low gate charge Excellent output capacitance (COSS) profile32 1

 7.1. Size:901K  st
stf6n65k3 stfi6n65k3 stu6n65k3.pdf

STF6N65M2
STF6N65M2

STF6N65K3, STFI6N65K3, STU6N65K3N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAKDatasheet production dataFeaturesOrder codes VDSS RDS(on) max. ID PtotSTF6N65K3TAB30 WSTFI6N65K3 650 V

 8.1. Size:1046K  st
stf6n60m2 stp6n60m2 stu6n60m2.pdf

STF6N65M2
STF6N65M2

STF6N60M2, STP6N60M2, STU6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 32 Order codes ID1TJmax maxIPAK3STF6N60M221STP6N60M2 650 V 1.2 4.5 ATO-220FP TABSTU6N60M2 Extremely low gate charge3 Lower RDS(on) x area vs previous

 8.2. Size:1046K  st
stf6n62k3 stfi6n62k3 sti6n62k3 stp6n62k3 stu6n62k3.pdf

STF6N65M2
STF6N65M2

STF6N62K3, STFI6N62K3, STI6N62K3,STP6N62K3, STU6N62K3N-channel 620 V, 0.95 typ., 5.5 A SuperMESH3 PowerMOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packagesDatasheet - production dataFeatures TABOrder codes VDSS RDS(on) max. ID PTOT33STF6N62K3 30 W2 211STFI6N62K3 30 WTO-220FPIPAKSTI6N62K3 620 V

 8.3. Size:427K  st
std6n62k3 stf6n62k3 stp6n62k3 stu6n62k3.pdf

STF6N65M2
STF6N65M2

STD6N62K3 - STF6N62K3STP6N62K3 - STU6N62K3N-channel 620 V, 1.1 , 5.5 A, IPAK, DPAK, TO-220,TO-220FPSuperMESH3 Power MOSFETFeatures3RDS(on) 3Type VDSS ID Pw2 1max1DPAKSTD6N62K3 620 V

 8.4. Size:1146K  st
sti6n62k3 stp6n62k3 stu6n62k3 stf6n62k3 std6n62k3.pdf

STF6N65M2
STF6N65M2

STD6N62K3, STF6N62K3STI6N62K3, STP6N62K3, STU6N62K3N-channel 620 V, 0.95 , 5.5 A SuperMESH3 Power MOSFETin IPAK, DPAK, TO-220,TO-220FP, IPAKFeaturesRDS(on) 3Order codes VDSS ID Pw2max.1321IPAKSTD6N62K3 90 WIPAKSTF6N62K3 30 W3STI6N62K3 620 V

 8.5. Size:824K  cn vbsemi
stf6n60m2.pdf

STF6N65M2
STF6N65M2

STF6N60M2www.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 1.1 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0 Avalanche energy rated (UIS)Qgd (nC) 2.7Configuratio

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: HFS730 | 2SK2095N | BL7N65B-U | SI8483DB | IXTT68P20T | SKI10123

 

 
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