STF8NK85Z Todos los transistores

 

STF8NK85Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STF8NK85Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 850 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO-220FP

 Búsqueda de reemplazo de MOSFET STF8NK85Z

 

STF8NK85Z Datasheet (PDF)

 ..1. Size:338K  st
stf8nk85z stp8nk85z stp8nk85z stf8nk85z.pdf

STF8NK85Z
STF8NK85Z

STP8NK85ZSTF8NK85ZN-channel 850V - 1.1 - 6.7A - TO-220 /TO-220FPZener - protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP8NK85Z 850 V

 ..2. Size:337K  st
stp8nk85z stf8nk85z 2.pdf

STF8NK85Z
STF8NK85Z

STP8NK85ZSTF8NK85ZN-channel 850V - 1.1 - 6.7A - TO-220 /TO-220FPZener - protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP8NK85Z 850 V

 8.1. Size:299K  st
stf8nk100z stp8nk100z.pdf

STF8NK85Z
STF8NK85Z

STF8NK100ZSTP8NK100ZN-CHANNEL 1000V - 1.60 - 6.5A - TO-220 - TO-220FPZener-Protected SuperMESH MOSFETGeneral featuresVDSS RDS(on) ID PwTypeSTF8NK100Z 1000 V

 9.1. Size:698K  st
stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf

STF8NK85Z
STF8NK85Z

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

 9.2. Size:1402K  st
std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf

STF8NK85Z
STF8NK85Z

STD8NM50N, STF8NM50NSTP8NM50N, STU8NM50NN-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFETin DPAK, IPAK, TO-220 and TO-220FPFeaturesOrder codes VDSS@TJMAX RDS(on)max. ID3312STD8NM50N1DPAKSTF8NM50NIPAK550 V

 9.3. Size:710K  st
stf8n60dm2.pdf

STF8NK85Z
STF8NK85Z

STF8N60DM2 N-channel 600 V, 550 m typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF8N60DM2 600 V 600 m 8 A 25 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness

 9.4. Size:726K  st
std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf

STF8NK85Z
STF8NK85Z

STD8NM60ND, STF8NM60NDSTP8NM60ND, STU8NM60NDN-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STD8NM60ND 650 V

 9.5. Size:1239K  st
stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf

STF8NK85Z
STF8NK85Z

STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V

 9.6. Size:698K  st
stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf

STF8NK85Z
STF8NK85Z

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

 9.7. Size:1298K  st
stb8n65m5 std8n65m5 stf8n65m5 stu8n65m5 stp8n65m5 sti8n65m5.pdf

STF8NK85Z
STF8NK85Z

STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V

 9.8. Size:700K  st
stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf

STF8NK85Z
STF8NK85Z

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

 9.9. Size:1125K  st
stf8n80k5 stfi8n80k5.pdf

STF8NK85Z
STF8NK85Z

STF8N80K5, STFI8N80K5N-channel 800 V, 0.8 typ., 6 A MDmesh K5 Power MOSFET in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max. ID PTOTSTF8N80K5800 V 0.95 6 A 25 WSTFI8N80K5 Industrys lowest RDS(on) x area Industrys best figure of merit (FoM) 3122 Ultra low gate charge13TO-220FPI2PAKFP (TO-2

 9.10. Size:201K  inchange semiconductor
stf8n65m5.pdf

STF8NK85Z
STF8NK85Z

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STF8N65M5FEATURESExcellent switching performanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV Gate-

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


STF8NK85Z
  STF8NK85Z
  STF8NK85Z
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top