STFW40N60M2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STF40N60M2, STFI40N60M2, STFW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF40N60M2STFI40N60M2 650 V 0.088 34 A321 STFW40N60M2123TO-220FPI2PAKFP (TO-281) Extremely low gate charge Lower RDS(on) x area

STFW4N150STP4N150, STW4N150N-channel 1500 V, 5 , 4 A, PowerMESH Power MOSFETin TO-220, TO-247, TO-3PFFeaturesType VDSS RDS(on) max ID PwSTFW4N150 1500 V

STFW45N65M5, STW45N65M5, STWA45N65M5N-channel 650 V, 35 A, 0.067 typ., MDmesh V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packagesDatasheet - production dataFeatures Order codes VDS @ TJmax RDS(on) max IDSTFW45N65M5STW45N65M5 710 V 0.078 35 A111STWA45N65M5332 21 1 Worldwide best RDS(on) * areaTO-247TO-3PFTO-247 long leads Hig

STFW45N65M5, STW45N65M5, STWA45N65M5N-channel 650 V, 35 A, 0.067 typ., MDmesh V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packagesDatasheet - production dataFeatures Order codes VDS @ TJmax RDS(on) max IDSTFW45N65M5STW45N65M5 710 V 0.078 35 A111STWA45N65M5332 21 1 Worldwide best RDS(on) * areaTO-247TO-3PFTO-247 long leads Hig

isc N-Channel MOSFET Transistor STFW4N150FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R

Isc N-Channel MOSFET Transistor STFW45N65M5FEATURESWith To-3PML packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage