IXFR180N085 Todos los transistores

 

IXFR180N085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFR180N085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 400 W

Tensión drenaje-fuente (Vds): 85 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 180 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 320 nC

Resistencia drenaje-fuente RDS(on): 0.007 Ohm

Empaquetado / Estuche: TO247

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IXFR180N085 Datasheet (PDF)

1.1. ixfr180n085.pdf Size:57K _ixys

IXFR180N085
IXFR180N085

HiPerFETTM Power MOSFETs IXFR 180N085 VDSS = 85 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 7 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25°C to 150°C85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 85 V VGS Continuous ±20 V VGSM Transient ±30 V G D ID25 TC = 25°C

1.2. ixfr180n07.pdf Size:32K _ixys

IXFR180N085
IXFR180N085

HiPerFETTM Power MOSFETs IXFR 180N07 VDSS = 70 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 6 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25°C to 150°C70 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 70 V G VGS Continuous ±20 V D VGSM Transient ±30 V Isolated back surface* ID

 2.1. ixfr180n15p.pdf Size:152K _ixys

IXFR180N085
IXFR180N085

IXFR 180N15P VDSS = 150 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET ? ? RDS(on) ? 13 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 150 V E153432 VDGR TJ = 25 C to 175 C; RGS = 1 M? 150

2.2. ixfr180n10.pdf Size:33K _ixys

IXFR180N085
IXFR180N085

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 V ISOPLUS247TM ID25 = 165 A (Electrically Isolated Back Surface) RDS(on)= 8 mW trr ? 250 ns Single MOSFET Die Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 MW 100 V VGS Continuous 20 V G VGSM Transient 30 V D Isolated back surface* ID25 TC = 25C

Otros transistores... IXFN73N30 , IXFN80N50 , IXFN90N30 , IXFR10N100Q , IXFR120N20 , IXFR12N100Q , IXFR15N80Q , IXFR180N07 , IRFP250 , IXFR180N10 , IXFR24N100 , IXFR24N50 , IXFR24N50Q , IXFR26N50 , IXFR26N50Q , IXFR30N50Q , IXFR32N50Q .

 
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