All MOSFET. IXFR180N085 Datasheet

 

IXFR180N085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFR180N085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 320 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 4000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO247

 IXFR180N085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFR180N085 Datasheet (PDF)

 ..1. Size:57K  ixys
 ixfr180n085.pdf

IXFR180N085 IXFR180N085

HiPerFETTM Power MOSFETsIXFR 180N085 VDSS = 85 VISOPLUS247TMID25 = 180 A(Electrically Isolated Back Surface)RDS(on)= 7 mWtrr 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VVGS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25C

 5.1. Size:32K  ixys
 ixfr180n07.pdf

IXFR180N085 IXFR180N085

HiPerFETTM Power MOSFETsIXFR 180N07 VDSS = 70 VISOPLUS247TMID25 = 180 A(Electrically Isolated Back Surface)RDS(on)= 6 mWtrr 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C70 VVDGR TJ = 25C to 150C; RGS = 1 MW 70 VGVGS Continuous 20 VDVGSM Transient 30 VIsolated back surface*ID

 6.1. Size:152K  ixys
 ixfr180n15p.pdf

IXFR180N085 IXFR180N085

IXFR 180N15P VDSS = 150 VPolarHVTM HiPerFETID25 = 100 APower MOSFET RDS(on) 13 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 175 C 150 V E153432VDGR TJ

 6.2. Size:33K  ixys
 ixfr180n10.pdf

IXFR180N085 IXFR180N085

HiPerFETTM Power MOSFETsIXFR 180N10 VDSS = 100 VISOPLUS247TMID25 = 165 A(Electrically Isolated Back Surface) RDS(on)= 8 mWtrr 250 nsSingle MOSFET DiePreliminary dataSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 VVGS Continuous 20 VGVGSM Transient 30 VDIsolated back surface*ID25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top