IXFR180N10 Todos los transistores

 ..1. Size:33K  ixys
 ixfr180n10.pdf

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 V ISOPLUS247TM ID25 = 165 A (Electrically Isolated Back Surface) RDS(on)= 8 mW trr 250 ns Single MOSFET Die Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V G VGSM Transient 30 V D Isolated back surface* ID25

 5.1. Size:152K  ixys
 ixfr180n15p.pdf

IXFR 180N15P VDSS = 150 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET RDS(on) 13 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 150 V E153432 VDGR TJ

 6.1. Size:57K  ixys
 ixfr180n085.pdf

HiPerFETTM Power MOSFETs IXFR 180N085 VDSS = 85 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 7 mW trr 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V VGS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C

 6.2. Size:32K  ixys
 ixfr180n07.pdf

HiPerFETTM Power MOSFETs IXFR 180N07 VDSS = 70 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 6 mW trr 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25 C to 150 C70 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 70 V G VGS Continuous 20 V D VGSM Transient 30 V Isolated back surface* ID